南方科技大学知识苑(SUSTech KC): 一种碳化硅位错检测方法

Title	一种碳化硅位错检测方法
Alternative Title	Silicon carbide dislocation detection method
Author	邓辉; 张翊
First Inventor	邓辉
Original applicant	南方科技大学
First applicant	南方科技大学
Address of First applicant	518055 广东省深圳市南山区西丽学苑大道1088号
Current applicant	南方科技大学
Address of Current applicant	518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
First Current Applicant	南方科技大学
Address of First Current Applicant	518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
Application Number	CN201811120149.8
Application Date	2018-09-25
Open (Notice) Number	CN109270065A
Date Available	2019-01-25
Status of Patent	驳回
Legal Date	2022-02-25
Subtype	发明申请
SUSTech Authorship	First
Abstract	本发明涉及单晶材料位错检测技术领域，公开了碳化硅位错检测方法。本发明提供一种碳化硅位错检测方法，包括如下步骤：S1，设置晶圆；S2，使用带有刻蚀气体的等离子体火炬扫描晶圆表面，对晶圆表面进行刻蚀；S3，对晶圆进行冷却处理；S4，观察晶圆表面刻蚀坑的数目，从而计算得到晶圆的位错密度。本发明的碳化硅位错检测方法，可以方便、快速地得到碳化硅表面刻蚀坑的数目信息，耗时短、危害性小、便于流水线工作。
Other Abstract	The invention relates to the technical field of dislocation detection of single-crystal materials and discloses a silicon carbide dislocation detection method. The silicon carbide dislocation detection method provided by the invention comprises the following steps: S1, setting a wafer; S2, scanning the surface of the wafer by utilizing a plasma torch with etching gas and etching the surface of thewafer; S3, carrying out cooling treatment on the wafer; S4, observing the quantity of etching pits on the surface of the wafer, so as to calculate the dislocation density of the wafer. The silicon carbide dislocation detection method provided by the invention can be used for conveniently and rapidly obtaining the quantity information of the etching pits on the surface of silicon carbide and has the advantages of short consumed time, small dangers and convenience for assembly line work.
CPC Classification Number	H01L22/12 ; G01N1/28 ; G01N1/34 ; G01N21/84
IPC Classification Number	G01N21/84 ; G01N1/28 ; G01N1/34 ; H01L21/66
INPADOC Legal Status	（-REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION）[2022-02-25][CN]
INPADOC Patent Family Count	1
Extended Patent Family Count	1
Priority date	2018-09-25
Patent Agent	唐致明
Agency	广州嘉权专利商标事务所有限公司
URL	[Source Record]
Data Source	PatSnap
Document Type	Patent
Identifier	http://kc.sustech.edu.cn/handle/2SGJ60CL/531675
Department	Department of Mechanical and Energy Engineering
Recommended Citation GB/T 7714	邓辉,张翊. 一种碳化硅位错检测方法.

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