具有超级结栅结构的常关型氮化镓场效应管及其制造方法

Normally-off gallium nitride field effect transistor with super junction gate structure and manufacturing method thereof

化梦媛; 曾凡明; 于洪宇; 程凯

化梦媛

南方科技大学

南方科技大学

518000 广东省深圳市南山区学苑大道1088号

南方科技大学

518000 广东省深圳市南山区学苑大道1088号 (广东,深圳,南山区)

南方科技大学

518000 广东省深圳市南山区学苑大道1088号 (广东,深圳,南山区)

CN201910135385.5

2019-02-22

CN109888002A

2019-06-14

驳回

2023-04-25

发明申请

First

本发明提供了一种具有超级结栅结构的常关型氮化镓场效应管及制造方法，该常关型氮化镓场效应管包括半导体基底、氮化镓衬底、氮化镓沟道层、氮化镓铝势垒层、钝化层、第一栅介质层、第二栅介质层、控制栅、源极和漏极，第一栅介质层和所述第二栅介质层形成超级结接触。本发明的有益效果是：本发明的常关型氮化镓场效应管的栅极包含一个超级结。具体的栅结构包含第一栅介质层和第二栅介质层。其中第一栅介质层可将沟道中的电子耗尽，实现常关型接触。第二栅介质层在第一栅介质层之上，和第一栅介质层形成超级结接触。该超级结可以增大p型栅的耐压，并减小栅极漏电。更重要的是，该超级结具有雪崩击穿或者齐纳击穿能力，显著提高栅极可靠性。

The invention provides a normally-off gallium nitride field effect transistor with a super junction gate structure and a manufacturing method thereof. The normally-off gallium nitride field effect transistor comprises a semiconductor substrate, a gallium nitride substrate, a gallium nitride channel layer, a gallium nitride aluminum barrier layer, a passivation layer, a first gate dielectric layer,a second gate dielectric layer, a control gate, a source electrode and a source electrode, wherein the first gate dielectric layer and the second gate dielectric layer form super junction contact. The normally-off gallium nitride field effect transistor has the beneficial effects that a gate electrode of the normally-off gallium nitride field effect transistor comprises a super junction; the specific gate structure comprises the first gate dielectric layer and the second gate dielectric layer; the first gate dielectric layer is capable of exhausting electrons in a channel to realize normally-off contact; the second gate dielectric layer is above the first gate dielectric layer and forms super junction contact with the first gate dielectric layer; the super junction is capable of enlargingthe voltage resistance of p-type gates and decreasing the electric leakage of the gate electrode; and more importantly, the super junction has avalanche breakdown or Zener breakdown ability, therebyremarkably improving the reliability of the gate electrode.

H01L29/423 ; H01L29/778 ; H01L21/335 ; H01L21/28

（ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION）[2019-07-09][CN]

1

1

2019-02-22

胡吉科

深圳市科吉华烽知识产权事务所(普通合伙)

PatSnap

化梦媛,曾凡明,于洪宇,等. 具有超级结栅结构的常关型氮化镓场效应管及其制造方法.