南方科技大学知识苑(SUSTech KC): 一种薄膜体声波谐振器及其制备方法

Title	一种薄膜体声波谐振器及其制备方法
Alternative Title	A film bulk acoustic resonator and a preparation method thereof
Author	于洪宇; 唐楚滢; 王亮 ; 何明浩
First Inventor	于洪宇
Original applicant	南方科技大学
First applicant	南方科技大学
Address of First applicant	518000 广东省深圳市南山区西丽学苑大道1088号
Current applicant	珠海镓未来科技有限公司
Address of Current applicant	519000 广东省珠海市横琴新区环岛东路3000号横琴国际商务中心901-9024室
First Current Applicant	珠海镓未来科技有限公司
Address of First Current Applicant	519000 广东省珠海市横琴新区环岛东路3000号横琴国际商务中心901-9024室
Application Number	CN201910111345.7
Application Date	2019-02-12
Open (Notice) Number	CN109861662A
Date Available	2019-06-07
Status of Patent	实质审查 ; 权利转移
Legal Date	2019-07-02
Subtype	发明申请
SUSTech Authorship	First
Abstract	本发明公开了一种薄膜体声波谐振器及其制备方法。该薄膜体声波谐振器包括：支撑层、谐振器本体和支撑体；薄膜体声波谐振器包括器件区和围绕器件区的非器件区，谐振器本体位于器件区内的支撑层上；非器件区内的支撑层包括多个条状的弯折结构，弯折结构向背离谐振器本体的一侧弯折；非器件区包括第一子区域和围绕第一子区域的第二子区域，支撑体设置于第二子区域内的所述支撑层背离谐振器本体的一侧；其中，弯折结构的延伸方向与支撑层的径向方向之间的夹角不为零，且位于谐振器本体同一侧的弯折结构相互之间无交叠。本实施例提供的薄膜体声波谐振器，可以得到厚度更小、残余应力更低的支撑层，进而提高谐振频率。
Other Abstract	The invention discloses a film bulk acoustic resonator and a preparation method thereof. The film bulk acoustic wave resonator comprises a supporting layer, a resonator body and a supporting body, Wherein the film bulk acoustic resonator comprises a device area and a non-device area surrounding the device area, and the resonator body is located on a supporting layer in the device area; The supporting layer in the non-device area comprises a plurality of strip-shaped bending structures, and the bending structures are bent towards one side deviating from the resonator body; The non-device regioncomprises a first sub-region and a second sub-region surrounding the first sub-region; the support body is arranged on one side, deviating from the resonator body, of the support layer in the secondsub-region; Wherein the included angle between the extending direction of the bending structure and the radial direction of the supporting layer is not zero, and the bending structures located on thesame side of the resonator body are not overlapped with each other. According to the film bulk acoustic wave resonator provided by the embodiment of the invention, the support layer with smaller thickness and lower residual stress can be obtained, so that the resonant frequency is improved.
IPC Classification Number	H03H3/02 ; H03H9/02 ; H03H9/17
INPADOC Legal Status	（TRANSFER OF PATENT APPLICATION RIGHT）[2021-05-11][CN]
INPADOC Patent Family Count	1
Extended Patent Family Count	1
Priority date	2019-02-12
Patent Agent	孟金喆
Agency	北京品源专利代理有限公司
URL	[Source Record]
Data Source	PatSnap
Document Type	Patent
Identifier	http://kc.sustech.edu.cn/handle/2SGJ60CL/532486
Department	SUSTech Institute of Microelectronics 南方科技大学-香港科技大学深港微电子学院筹建办公室
Recommended Citation GB/T 7714	于洪宇,唐楚滢,王亮,等. 一种薄膜体声波谐振器及其制备方法.

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