南方科技大学知识苑(SUSTech KC): P型氮化镓基器件、其欧姆接触系统、及其电极制备方法

Title	P型氮化镓基器件、其欧姆接触系统、及其电极制备方法
Alternative Title	P-type gallium nitride-based device, ohmic contact system thereof and electrode preparation method thereof
Author	卢宏浩; 唐楚滢; 汪青; 于洪宇; 王祥; 潘晓冬; 杜方洲
First Inventor	卢宏浩
Original applicant	南方科技大学 ; 深圳智芯微电子科技有限公司
First applicant	南方科技大学
Address of First applicant	518055 广东省深圳市南山区西丽学苑大道1088号
Current applicant	南方科技大学 ; 深圳智芯微电子科技有限公司
Address of Current applicant	518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
First Current Applicant	南方科技大学
Address of First Current Applicant	518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
Application Number	CN202110795701.9
Application Date	2021-07-14
Open (Notice) Number	CN113488531A
Date Available	2021-10-08
Status of Patent	实质审查
Legal Date	2021-10-26
Subtype	发明申请
SUSTech Authorship	First
Abstract	本发明实施例公开了一种P型氮化镓基器件、其欧姆接触系统、及其电极制备方法。该欧姆接触系统包括：P型氮化镓层以及位于所述P型氮化镓层一侧的电极，电极包括势垒层以及吸氢合金层；其中，势垒层的功函数大于预设功函数阈值，吸氢合金层的吸氢能力大于P型氮化镓中镁的吸氢能力。本发明实施例提供的P型氮化镓基器件的电极制备技术方案，用于P型氮化镓基器件的源极和漏极，既可以降低欧姆接触的势垒高度，同时还能减薄势垒厚度，并且还解决了接触系统的外扩散、退化等问题，提高了接触的稳定性，降低欧姆接触电阻率，提高了P型氮化镓基器件的性能。
Other Abstract	An embodiment of the invention discloses a P-type gallium nitride-based device, an ohmic contact system thereof and an electrode preparation method thereof. The ohmic contact system comprises a P-type gallium nitride layer and an electrode located on one side of the P-type gallium nitride layer, wherein the electrode comprises a barrier layer and a hydrogen absorption alloy layer; and a work function of the barrier layer is larger than a preset work function threshold value, and the hydrogen absorption capacity of the hydrogen absorption alloy layer is greater than the hydrogen absorption capacity of magnesium in P-type gallium nitride. The electrode preparation method of the P-type gallium nitride-based device provided by the embodiment of the invention is used for a source electrode and a drain electrode of the P-type gallium nitride-based device, so that the barrier height of ohmic contact can be reduced, the barrier thickness can be reduced, the problems of external diffusion, degradation and the like of a contact system are solved, the contact stability is improved, the ohmic contact resistivity is reduced, and the performance of the P-type gallium nitride-based device is improved.
CPC Classification Number	H01L29/452 ; H01L29/41725 ; H01L29/78 ; H01L29/401
IPC Classification Number	H01L29/45 ; H01L29/417 ; H01L21/28 ; H01L29/78
INPADOC Legal Status	（ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION）[2021-10-26][CN]
INPADOC Patent Family Count	1
Extended Patent Family Count	1
Priority date	2021-07-14
Patent Agent	潘登
Agency	北京品源专利代理有限公司
URL	[Source Record]
Data Source	PatSnap
Document Type	Patent
Identifier	http://kc.sustech.edu.cn/handle/2SGJ60CL/532528
Department	Preparatory Office of SUSTech Institute of Microelectronics, SUSTech and HKUST 工学院_深港微电子学院
Recommended Citation GB/T 7714	卢宏浩,唐楚滢,汪青,等. P型氮化镓基器件、其欧姆接触系统、及其电极制备方法.

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