中文版 | English
Title

一种高电子迁移率晶体管及制备方法

Alternative Title
High-electron-mobility transistor and preparation method thereof
Author
First Inventor
蒋苓利
Original applicant
南方科技大学 ; 苏州珂晶达电子有限公司
First applicant
南方科技大学
Address of First applicant
518000 广东省深圳市南山区西丽学苑大道1088号
Current applicant
南方科技大学 ; 苏州珂晶达电子有限公司
Address of Current applicant
518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
First Current Applicant
南方科技大学
Address of First Current Applicant
518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
Application Number
CN201610852160.8
Application Date
2016-09-26
Open (Notice) Number
CN106298910A
Date Available
2017-01-04
Status of Patent
驳回
Legal Date
2020-08-28
Subtype
发明申请
SUSTech Authorship
First
Abstract
本发明公开了一种高电子迁移率晶体管及制备方法,其中,高电子迁移率晶体管包括:衬底;位于衬底上的半导体层,其中,半导体层包括有源区,有源区包括源区、漏区及源区与漏区之间的栅区,半导体层包括异质结构,异质界面形成二维电子气,栅区的半导体层上形成有凹槽,且凹槽下方半导体层的厚度大于满足增强型晶体管条件的厚度;位于半导体层上两端的源极和漏极;位于凹槽中的第一介质层;位于第一介质层上的浮栅;包覆浮栅和第一介质层的第二介质层;位于第二介质层上的控制栅。本发明解决了增强型氮化镓高电子迁移率晶体管的工艺控制难度高和工艺重复性差的问题,提高了半导体器件的稳定性,降低了编程电荷密度,增强了半导体器件的可靠性。
Other Abstract
The invention discloses a high-electron-mobility transistor and a preparation method thereof, wherein the high-electron-mobility transistor comprises a substrate, a semiconductor layer, a source electrode, a drain electrode, a first dielectric layer, a floating grid, a second dielectric layer and a control grid; the semiconductor layer is positioned on the substrate, and comprises an active region; the active region comprises a source region, a drain region and a grid region formed between the source region and the drain region; the semiconductor layer comprises a heterogeneous structure; two-dimensional electron gas is formed at an heterogeneous interface; a groove is formed in the semiconductor layer of the grid region; the thickness of the semiconductor layer under the groove is greater than the thickness meeting the enhanced transistor conditions; the source electrode and the drain electrode are positioned at the two ends of the semiconductor layer; the first dielectric layer is positioned in the groove; the floating grid is positioned on the first dielectric layer; the second dielectric layer covers the floating grid and the first dielectric layer; the control grid is positioned on the second dielectric layer. The high-electron-mobility transistor and the preparation method solve the problems of high process control difficulty and poor process repeatability of an enhanced gallium nitride high-electron-mobility transistor. The stability of a semiconductor device is improved; the program charging density is reduced; the reliability of the semiconductor device is enhanced.
CPC Classification Number
H01L29/66462 ; H01L29/7786
IPC Classification Number
H01L29/778 ; H01L21/335
INPADOC Legal Status
(-REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION)[2020-08-28][CN]
INPADOC Patent Family Count
5
Extended Patent Family Count
5
Priority date
2016-09-26
Patent Agent
孟金喆 ; 胡彬
Agency
北京品源专利代理有限公司
URL[Source Record]
Data Source
PatSnap
Document TypePatent
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/532563
DepartmentSUSTech Institute of Microelectronics
Recommended Citation
GB/T 7714
蒋苓利,沈忱,于洪宇,等. 一种高电子迁移率晶体管及制备方法.
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