南方科技大学知识苑(SUSTech KC): 纳米柱的制备方法和纳米柱LED器件的制备方法

Title	纳米柱的制备方法和纳米柱LED器件的制备方法
Alternative Title	Preparation method of nanorod and preparation method of nanorod LED device
Author	刘召军; 蒋府龙; 李四龙
First Inventor	刘召军
Original applicant	南方科技大学
First applicant	南方科技大学
Address of First applicant	518000 广东省深圳市南山区西丽学苑大道1088号
Current applicant	南方科技大学
Address of Current applicant	518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
First Current Applicant	南方科技大学
Address of First Current Applicant	518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
Application Number	CN202010354234.1
Application Date	2020-04-29
Open (Notice) Number	CN111430514A
Date Available	2020-07-17
Status of Patent	实质审查
Legal Date	2020-08-11
Subtype	发明申请
SUSTech Authorship	First
Abstract	本发明实施例提供了一种纳米柱的制备方法和纳米柱LED器件的制备方法。该纳米柱的制备方法包括：在LED晶片的上表面蒸镀第一金属层和第二金属层，其中，LED晶片包括p型GaN层、量子阱有源层、n型GaN层和衬底，其中p型GaN层的上表面作为LED晶片的上表面，p型GaN层的下表面与量子阱有源层的上表面接触，量子阱有源层的下表面与n型GaN层的上表面接触，n型GaN层的下表面和衬底的上表面接触；对蒸镀有第一金属层和第二金属层的LED晶片进行热退火处理以形成多个掩膜，掩膜与p型GaN层形成欧姆接触；通过掩膜对LED晶片的p型GaN层、量子阱有源层和n型GaN层进行刻蚀形成多个LED纳米柱，LED纳米柱的两端用于与电极连接。达到提高纳米LED的P型欧姆接触性能的效果。
Other Abstract	The embodiment of the invention provides a preparation method of a nanorod and a preparation method of a nanorod LED device. The preparation method of the nanorod comprises the following steps: evaporating a first metal layer and a second metal layer on the upper surface of an LED wafer, wherein the LED wafer comprises a p-type GaN layer, a quantum well active layer, an n-type GaN layer and a substrate, the upper surface of the p-type GaN layer being used as the upper surface of the LED wafer, the lower surface of the p-type GaN layer making contact with the upper surface of the quantum well active layer, the lower surface of the quantum well active layer making contact with the upper surface of the n-type GaN layer, and the lower surface of the n-type GaN layer making contact with the upper surface of the substrate; performing thermal annealing treatment on the LED wafer evaporated with the first metal layer and the second metal layer to form a plurality of masks, wherein the masks and the p-type GaN layer form ohmic contact; and etching the p-type GaN layer, the quantum well active layer and the n-type GaN layer of the LED wafer through the masks to form a plurality of LED nanorods, wherein the two ends of each LED nanorod are used for being connected with electrodes. The effect of improving the P-type ohmic contact performance of the nano LED is achieved.
CPC Classification Number	H01L33/0075 ; B81C1/00111 ; H01L33/06
IPC Classification Number	H01L33/00 ; H01L33/06 ; B81C1/00
INPADOC Legal Status	（ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION）[2020-08-11][CN]
INPADOC Patent Family Count	1
Extended Patent Family Count	1
Priority date	2020-04-29
Patent Agent	潘登
Agency	北京品源专利代理有限公司
URL	[Source Record]
Data Source	PatSnap
Document Type	Patent
Identifier	http://kc.sustech.edu.cn/handle/2SGJ60CL/532610
Department	Department of Electrical and Electronic Engineering
Recommended Citation GB/T 7714	刘召军,蒋府龙,李四龙. 纳米柱的制备方法和纳米柱LED器件的制备方法.

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