南方科技大学知识苑(SUSTech KC): 一种晶圆减薄工艺和装置

Title	一种晶圆减薄工艺和装置
Alternative Title	Wafer thinning process and wafer thinning device
Author	赵永华; 关均铭
First Inventor	赵永华
Original applicant	南方科技大学
First applicant	南方科技大学
Address of First applicant	518055 广东省深圳市南山区西丽学苑大道1088号
Current applicant	南方科技大学
Address of Current applicant	518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
First Current Applicant	南方科技大学
Address of First Current Applicant	518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
Application Number	CN201910627743.4
Application Date	2019-07-12
Open (Notice) Number	CN110625205A
Date Available	2019-12-31
Status of Patent	实质审查
Legal Date	2020-01-24
Subtype	发明申请
SUSTech Authorship	First
Abstract	本发明涉及晶圆厚度减薄技术领域，公开了一种晶圆减薄工艺和装置，晶圆减薄工艺以电火花工艺为基础，晶圆减薄装置包括电源，电源至少包括第一极与第二极，第一极用于与待加工的晶圆电连接，第二极连接加工工具，所述加工工具与所述晶圆之间具有间隙，所述电源能在所述晶圆与所述加工工具之间产生击穿所述间隙内介质的电压。本发明运用电火花加工的原理，以晶圆作为电极材料，依靠放电产生的能量去除材料，因此不受材料硬度限制，解决了传统机械磨削对第三代半导体等超硬材料进行加工难的问题，且该手段属于非接触型加工，不存在接触作用力，也不会产生残余应力，整个工艺过程中不会产生环境污染物，且成本适中。
Other Abstract	The invention relates to the technical field of wafer thickness reduction and discloses a wafer thinning process and a wafer thinning device. The wafer thinning process is based on an electric spark process. The wafer thinning device comprises a power supply which at least comprises a first electrode and a second electrode. The first electrode is electrically connected to a to-be-processed wafer,the second electrode is connected to a processing tool, a gap exists between the processing tool and the wafer, and the power supply can generate a voltage capable of breaking a medium in the gap downbetween the wafer and the processing tool. By applying an electric spark processing principle and taking the wafer as an electrode material, a material is removed by means of energy generated by discharge, so that the process is not limited by hardness of the material, and the problem that super-hard materials such as a third generation semiconductor are difficultly processed by conventional mechanical grinding is solved. The process which is non-contact processing is free of contact acting force and does not generate residual stress. Environmental pollutants are not generated in the whole process course, and the cost is moderate.
CPC Classification Number	B23H1/00 ; B23H11/00 ; H01L21/02
IPC Classification Number	B23H1/00 ; B23H11/00 ; H01L21/02
INPADOC Legal Status	（ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION）[2020-01-24][CN]
INPADOC Patent Family Count	1
Extended Patent Family Count	1
Priority date	2019-07-12
Patent Agent	张建珍
Agency	广州嘉权专利商标事务所有限公司
URL	[Source Record]
Data Source	PatSnap
Document Type	Patent
Identifier	http://kc.sustech.edu.cn/handle/2SGJ60CL/533088
Department	Department of Mechanical and Energy Engineering
Recommended Citation GB/T 7714	赵永华,关均铭. 一种晶圆减薄工艺和装置.

Files in This Item:
There are no files associated with this item.

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Affiliation Sequential No:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh