中文版 | English
Title

薄膜体声波谐振器及其制造方法

Alternative Title
Film bulk acoustic resonator and manufacturing method thereof
Author
First Inventor
王亮
Original applicant
南方科技大学 ; 苏州晶湛半导体有限公司
First applicant
南方科技大学
Address of First applicant
518000 广东省深圳市南山区西丽学苑大道1088号
Current applicant
南方科技大学 ; 苏州晶湛半导体有限公司
Address of Current applicant
518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
First Current Applicant
南方科技大学
Address of First Current Applicant
518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
Application Number
CN201910796382.6
Application Date
2019-08-27
Open (Notice) Number
CN110492860A
Date Available
2019-11-22
Status of Patent
实质审查
Legal Date
2019-12-17
Subtype
发明申请
SUSTech Authorship
First
Abstract
本发明公开了一种薄膜体声波谐振器及其制造方法。其中,方法包括:提供过渡基板,并在过渡基板上沉积氮化铝材料;对氮化铝材料进行退火处理,形成氮化铝层;在氮化铝层上形成第一电极;提供具有空腔的衬底,将氮化铝层靠近第一电极的一侧与衬底具有空腔的一侧键合,第一电极位于空腔内;去除过渡基板;在氮化铝层远离第一电极的一侧制备第二电极。本发明提供的薄膜体声波谐振器及其制造方法,大大提升了薄膜体声波谐振器中氮化铝材料的晶体质量。
Other Abstract
The invention discloses a film bulk acoustic resonator and a manufacturing method thereof. The method comprises the steps of providing a transition substrate, depositing an aluminum nitride material on the transition substrate; carrying out annealing treatment on the aluminum nitride material to form an aluminum nitride layer; forming a first electrode on the aluminum nitride layer; providing a substrate with a cavity, bonding the side, close to the first electrode, of the aluminum nitride layer to the side, with the cavity, of the substrate, and locating the first electrode in the cavity; removing the transition substrate; and preparing a second electrode on one side, away from the first electrode, of the aluminum nitride layer. According to the film bulk acoustic resonator and the manufacturing method thereof provided by the invention, the crystal quality of the aluminum nitride material in the film bulk acoustic resonator is greatly improved.
CPC Classification Number
H03H3/02 ; H03H9/171 ; H03H9/02047 ; H03H9/02102 ; H03H2003/023
IPC Classification Number
H03H3/02 ; H03H9/17 ; H03H9/02
INPADOC Legal Status
(ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION)[2019-12-17][CN]
INPADOC Patent Family Count
1
Extended Patent Family Count
1
Priority date
2019-08-27
Patent Agent
孟金喆
Agency
北京品源专利代理有限公司
URL[Source Record]
Data Source
PatSnap
Document TypePatent
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/533141
DepartmentSUSTech Institute of Microelectronics
Recommended Citation
GB/T 7714
王亮,程凯,于洪宇. 薄膜体声波谐振器及其制造方法.
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