南方科技大学知识苑(SUSTech KC): 一种气体传感器及其制备方法

Title	一种气体传感器及其制备方法
Alternative Title	Gas sensor and preparation method thereof
Author	李汶懋 ; 罗伯特·索科洛夫斯基; 于洪宇; 汪青
First Inventor	李汶懋
Original applicant	南方科技大学
First applicant	南方科技大学
Address of First applicant	518055 广东省深圳市南山区西丽学苑大道1088号
Current applicant	南方科技大学
Address of Current applicant	518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
First Current Applicant	南方科技大学
Address of First Current Applicant	518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
Application Number	CN202110077044.4
Application Date	2021-01-20
Open (Notice) Number	CN112924515A
Date Available	2021-06-08
Status of Patent	实质审查
Legal Date	2021-06-25
Subtype	发明申请
SUSTech Authorship	First
Abstract	本发明实施例公开了一种气体传感器及其制备方法，其中气体传感器包括：依次层叠的半导体衬底、缓冲层、势垒层、帽层，以及位于势垒层远离沟道层一侧的源极和漏极；还包括耐温绝缘层，耐温绝缘层设置于源极和漏极远离势垒层的一侧；耐温绝缘层覆盖势垒层和沟道层沿传感器厚度方向的侧壁，且覆盖势垒层未设置源极和漏极的区域；还包括栅极，栅极位于耐温绝缘层远离半导体衬底的一侧，且位于源极和漏极之间的感应区域。本发明实施例提供的技术方案提高了气体传感器的耐温性，扩大了测试温度的范围，增加了检测气体的范围。
Other Abstract	An embodiment of the invention discloses a gas sensor and a preparation method thereof. The gas sensor comprises a semiconductor substrate, a buffer layer, a barrier layer and a cap layer which are stacked in sequence, a source electrode and a drain electrode which are located on the side, away from the channel layer, of the barrier layer, and further comprises a temperature-resistant insulating layer and a gate electrode, wherein the temperature-resistant insulating layer is arranged on one side, far away from the barrier layer, of the source electrode and the drain electrode; the temperature-resistant insulating layer covers the side walls of the barrier layer and a channel layer in the thickness direction of the sensor, and covers the region, which is not provided with the source electrode and the drain electrode, of the barrier layer; and the gate electrode is positioned on one side, far away from the semiconductor substrate, of the temperature-resistant insulating layer and is positioned in an induction region between the source electrode and the drain electrode. According to the gas sensor and the preparation method thereof provided by the embodiment of the invention, the temperature resistance of the gas sensor is improved, the test temperature range is expanded, and the gas detection range is increased.
CPC Classification Number	G01N27/416
IPC Classification Number	G01N27/416
INPADOC Legal Status	（ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION）[2021-06-25][CN]
INPADOC Patent Family Count	1
Extended Patent Family Count	1
Priority date	2021-01-20
Patent Agent	潘登
Agency	北京品源专利代理有限公司
URL	[Source Record]
Data Source	PatSnap
Document Type	Patent
Identifier	http://kc.sustech.edu.cn/handle/2SGJ60CL/533720
Department	SUSTech Institute of Microelectronics
Recommended Citation GB/T 7714	李汶懋,罗伯特·索科洛夫斯基,于洪宇,等. 一种气体传感器及其制备方法.

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