| Title | NiGe单晶薄膜及其制备方法和应用 |
| Alternative Title | NiGe single crystal film, preparation method and application thereof
|
| Author | |
| First Inventor | 邓云生
|
| Original applicant | 南方科技大学
|
| First applicant | 南方科技大学
|
| Address of First applicant | 518055 广东省深圳市南山区西丽学苑大道1088号
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| Current applicant | 南方科技大学
|
| Address of Current applicant | 518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
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| First Current Applicant | 南方科技大学
|
| Address of First Current Applicant | 518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
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| Application Number | CN201810745171.5
|
| Application Date | 2018-07-09
|
| Open (Notice) Number | CN110060920A
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| Date Available | 2019-07-26
|
| Status of Patent | 驳回
|
| Legal Date | 2022-04-08
|
| Subtype | 发明申请
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| SUSTech Authorship | First
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| Abstract | 本发明涉及半导体材料与器件技术领域，具体提供一种NiGe单晶薄膜及其制备方法和应用。所述制备方法至少包括以下步骤：提供洁净的Ge(110)基底；将所述Ge(110)基底置于真空环境中加热至200～800℃，并恒温10～60min，随后冷却至室温，获得预用基底；在真空环境下，对所述预用基底进行Ni膜的蒸镀处理，使Ge(110)表面镀覆有Ni膜；在惰性气氛下，对前述得到的镀覆有Ni膜的Ge(110)基底进行退火处理，使所述Ni膜和所述Ge(110)基底发生固相反应，获得NiGe单晶薄膜。本发明的方法可以获得肖特基势垒低、接触电阻小且热稳定性良好的NiGe单晶薄膜，特别适用于MOSFET器件领域。 |
| Other Abstract | The invention relates to the technical field of semiconductor materials and devices, and specifically provides an NiGe single crystal film, a preparation method and application thereof. The preparation method at least comprises the following steps: providing a clean Ge (110) base; heating the Ge (110) base in a vacuum environment until 200 to 800 DEG C, and preserving a constant temperature for 10to 60 min, and then cooling to room temperature to obtain a pre-use base; in the vacuum environment, carrying out evaporation treatment of an Ni film on the pre-use base so that the surface of the Ge(110) is coated with the Ni film; and in an inert atmosphere, carrying out annealing treatment on the obtained Ge (110) base coated with the Ni film so that a solid-phase reaction occurs on the Ni film and the Ge (110) base to obtain the NiGe single crystal film. According to the method provided by the invention, the NiGe single crystal film with low schottky barrier, small contact resistance andhigh heat stability can be obtained, and the method is particularly applicable for the field of MOSFET devices. |
| CPC Classification Number | H01L21/02104
; H01L21/02631
; H01L29/78
|
| IPC Classification Number | H01L21/02
; H01L29/78
|
| INPADOC Legal Status | （-REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION）[2022-04-08][CN]
|
| INPADOC Patent Family Count | 1
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| Extended Patent Family Count | 1
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| Priority date | 2018-07-09
|
| Patent Agent | 官建红
|
| Agency | 深圳中一专利商标事务所
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| URL | [Source Record] |
| Data Source | PatSnap
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| Document Type | Patent |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/533766 |
| Department | Public Testing and Analysis Center 工学院_材料科学与工程系 |
| Recommended Citation GB/T 7714 |
邓云生,何东升,邱杨,等. NiGe单晶薄膜及其制备方法和应用.
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| Files in This Item: | There are no files associated with this item. | |||||
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