南方科技大学知识苑(SUSTech KC): 一种基于表面等离激元增强的LED光电器件及其制备方法

Title	一种基于表面等离激元增强的LED光电器件及其制备方法
Alternative Title	LED photoelectric device based on surface plasmon enhancement and preparation method thereof
Author	王恺; 周子明 ; 谢斌; 郝俊杰; 陈威 ; 孙小卫
First Inventor	王恺
Original applicant	南方科技大学
First applicant	南方科技大学
Address of First applicant	518000 广东省深圳市南山区西丽学苑大道1088号
Current applicant	南方科技大学
Address of Current applicant	518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
First Current Applicant	南方科技大学
Address of First Current Applicant	518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
Application Number	CN201710669620.8
Application Date	2017-08-08
Open (Notice) Number	CN107507901A
Date Available	2017-12-22
Status of Patent	实质审查
Legal Date	2018-01-19
Subtype	发明申请
SUSTech Authorship	First
Abstract	本发明公开了一种LED光电器件及其制备方法，所述光电器件包括LED芯片，含有量子点和包覆型纳米金属颗粒的光转换层，以及位于光电器件外部的第一封装层，所述光转换层位于所述LED芯片的表面，且光转换层与LED芯片之间可选的包含第二封装层。所述方法包括：1)配制含量子点和包覆型纳米金属颗粒的混合液；2)将混合液与基质溶液混合，使溶剂挥发；3)将得到的光转换层放在LED芯片上，封装，得到LED光电器件。本发明通过将量子点和包覆型金属纳米颗粒引入光转换层中，实现了光转换层中的量子点和包覆型金属纳米颗粒之间的LSPR增强效应，显著提高了光转换效率，在显示照明领域具有广阔的应用前景。
Other Abstract	The invention discloses an LED photoelectric device and a preparation method thereof. The photoelectric device comprises an LED chip, a light conversion layer containing quantum dots and coated nano-metal particles, and a first encapsulation layer located outside the photoelectric device. The light conversion layer is located on the surface of the LED chip. A second encapsulation layer is optionally included between the light conversion layer and the LED chip. The method comprises the steps that 1) a mixed solution containing the quantum dots and the coated nano-metal particles is prepared; 2) the mixed solution and a matrix solution are mixed to volatilize a solvent; and 3) the acquired light conversion layer is placed on the LED chip, and encapsulation is carried out to acquire the LED optoelectronic device. According to the invention, the LSPR enhancement effect between the quantum dots and the coated nano-metal particles in the light conversion layer is realized by introducing the quantum dots and the coated nano-metal particles into the light conversion layer; the light conversion efficiency is obviously improved; and the LED photoelectric device and the preparation method thereof have broad application prospects in the field of display lighting.
CPC Classification Number	G02F1/1336 ; G02F1/133614 ; H01L33/50 ; H01L33/52
IPC Classification Number	H01L33/50 ; H01L33/52 ; G02F1/13357
INPADOC Legal Status	（ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION）[2018-01-19][CN]
INPADOC Patent Family Count	1
Extended Patent Family Count	1
Priority country	CN
Priority number	201710641451.7
Priority date	2017-07-31
Patent Agent	巩克栋
Agency	北京品源专利代理有限公司
URL	[Source Record]
Data Source	PatSnap
Document Type	Patent
Identifier	http://kc.sustech.edu.cn/handle/2SGJ60CL/533952
Department	Department of Electrical and Electronic Engineering
Recommended Citation GB/T 7714	王恺,周子明,谢斌,等. 一种基于表面等离激元增强的LED光电器件及其制备方法.

Files in This Item:
There are no files associated with this item.

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Affiliation Sequential No:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh