| Title | 制备高精度图案化的量子点发光层的方法及其应用 |
| Alternative Title | Preparation method and application of high-precision patterned quantum dot light emitting layer
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| Author | |
| First Inventor | 陈树明
|
| Original applicant | 南方科技大学
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| First applicant | 南方科技大学
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| Address of First applicant | 518055 广东省深圳市南山区西丽学苑大道1088号
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| Current applicant | 南方科技大学
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| Address of Current applicant | 518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
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| First Current Applicant | 南方科技大学
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| Address of First Current Applicant | 518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
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| Application Number | CN201710680555.9
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| Application Date | 2017-08-10
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| Open (Notice) Number | CN107611021A
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| Date Available | 2018-01-19
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| Status of Patent | 驳回
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| Legal Date | 2021-04-02
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| Subtype | 发明申请
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| SUSTech Authorship | First
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| Abstract | 本发明提出了制备高精度图案化的量子点发光层的方法及其应用。该制备高精度图案化的量子点发光层的方法包括：(1)在衬底的一侧涂布反转光刻胶，并对反转光刻胶进行光刻处理，以便形成纵截面为倒梯形的镂空图案；(2)对镂空图案处的衬底进行疏水处理，并沉积量子点薄膜；(3)对量子点薄膜进行交联处理；(4)剥离反转光刻胶。本发明所提出的制备方法，使用反转光刻胶后，可使得显影后光刻胶的纵截面为倒梯形结构，如此能使光刻胶更易被剥离，从而使量子点发光层图形的精度更高，进而使制备量子点发光层图形方法的良品率显著提高。 |
| Other Abstract | The invention provides a preparation method and an application of a high-precision patterned quantum dot light emitting layer. The preparation method of the high-precision patterned quantum dot lightemitting layer comprises the steps of (1) coating one side of a substrate with a reversed photoresist and performing photoetching treatment on the reversed photoresist so as to form a hollow-out pattern with an inverted trapezoidal longitudinal section; (2) performing hydrophobic treatment on the substrate in the hollow-out pattern, and depositing a quantum dot thin film; (3) performing crosslinking treatment on the quantum dot thin film; and (4) stripping off the reversed photoresist. According to the preparation method provided by the invention, after the reversed photoresist is adopted, thelongitudinal section of the developed photoresist can be in the inverted trapezoidal structure, so that the photoresist can be stripped off more easily, thereby achieving higher precision of the quantum dot light emitting pattern, and further obviously improving the yield of the preparation method of the quantum dot light emitting layer pattern. |
| IPC Classification Number | H01L21/027
; H01L33/00
; H01L33/06
; H01L33/24
; H01L33/28
|
| INPADOC Legal Status | （-REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION）[2021-04-02][CN]
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| INPADOC Patent Family Count | 1
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| Extended Patent Family Count | 1
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| Priority date | 2017-08-10
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| Patent Agent | 黄德海
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| Agency | 北京清亦华知识产权代理事务所(普通合伙)
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| URL | [Source Record] |
| Data Source | PatSnap
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| Document Type | Patent |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/534252 |
| Department | Department of Electrical and Electronic Engineering |
| Recommended Citation GB/T 7714 |
陈树明,纪婷婧,孙小卫. 制备高精度图案化的量子点发光层的方法及其应用.
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