南方科技大学知识苑(SUSTech KC): 基于电感耦合等离子体的单晶材料抛光装置及抛光方法

Title	基于电感耦合等离子体的单晶材料抛光装置及抛光方法
Alternative Title	Single crystal material polishing device and polishing method based on inductively coupled plasma
Author	邓辉; 张翊
First Inventor	邓辉
Original applicant	南方科技大学
First applicant	南方科技大学
Address of First applicant	518055 广东省深圳市南山区西丽学苑大道1088号
Current applicant	南方科技大学
Address of Current applicant	518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
First Current Applicant	南方科技大学
Address of First Current Applicant	518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
Application Number	CN201811116072.7
Application Date	2018-09-25
Open (Notice) Number	CN109087845A
Date Available	2018-12-25
Status of Patent	实质审查 ; 许可
Legal Date	2019-01-18
Subtype	发明申请
SUSTech Authorship	First
Abstract	本发明涉及单晶材料抛光技术领域，公开了一种基于电感耦合等离子体的单晶材料抛光装置及抛光方法。本发明的基于电感耦合等离子体的单晶材料抛光装置包括矩管，矩管包括第一发生管、设于第一发生管外的第二发生管以及设于第二发生管外的第三发生管；与第二发生管及第三发生管连通的惰性气体提供装置；与第一气体发生管连通的刻蚀气体提供装置；与矩管连通的电火花发生器；电感线圈，矩管的出口设于电感线圈内，其连接有射频电源。本发明的基于电感耦合等离子体的单晶材料抛光方法基于上述抛光装置。本发明的基于电感耦合等离子体体的单晶材料抛光装置及抛光方法具有去除速率快、不引入亚表面损伤、不需要磨浆、不需要后清洗的优点。
Other Abstract	The invention relates to the technical field of single crystal material polishing, and discloses a single crystal material polishing device and polishing method based on inductively coupled plasma. The single crystal material polishing device based on inductively coupled plasma comprises: a rectangular tube, wherein the rectangular tube comprises a first generating tube, a second generating tube arranged outside the first generating tube and a third generating tube arranged outside the second generating tube; an inert gas supply device in communication with the second generation pipe and the third generation pipe; an etching gas supplying device in communication with the first gas generating tube; a spark generator in communication with the torque tube; an inductor coil, wherein an outletof a torque tube is arranged in the inductor coil and is connected with a radio frequency power supply. The single crystal material polishing method based on inductively coupled plasma of the presentinvention is based on the polishing device. The single crystal material polishing device and polishing method based on the inductively coupled plasma body of the invention have the advantages of fastremoval rate, no introduction of sub-surface damage, no need for grinding slurry and no need for post-cleaning.
CPC Classification Number	H01J37/32431 ; H01J37/32798 ; H01J2237/02 ; H01J2237/3151
IPC Classification Number	H01J37/32
INPADOC Legal Status	（ENTRY INTO FORCE OF RECORDATION OF PATENT LICENSING CONTRACT）[2021-04-13][CN]
INPADOC Patent Family Count	1
Extended Patent Family Count	1
Priority date	2018-09-25
Patent Agent	唐致明
Agency	广州嘉权专利商标事务所有限公司
URL	[Source Record]
Data Source	PatSnap
Document Type	Patent
Identifier	http://kc.sustech.edu.cn/handle/2SGJ60CL/534316
Department	Department of Mechanical and Energy Engineering
Recommended Citation GB/T 7714	邓辉,张翊. 基于电感耦合等离子体的单晶材料抛光装置及抛光方法.

Files in This Item:
There are no files associated with this item.

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Affiliation Sequential No:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh