中文版 | English
Title

一种高电子迁移率晶体管及其制作方法

Alternative Title
Transistor with high electron mobility and manufacturing method thereof
Author
First Inventor
于洪宇
Original applicant
南方科技大学
First applicant
南方科技大学
Address of First applicant
518000 广东省深圳市南山区西丽学苑大道1088号
Current applicant
珠海镓未来科技有限公司
Address of Current applicant
519000 广东省珠海市横琴新区环岛东路3000号横琴国际商务中心901-9024室
First Current Applicant
珠海镓未来科技有限公司
Address of First Current Applicant
519000 广东省珠海市横琴新区环岛东路3000号横琴国际商务中心901-9024室
Application Number
CN201910088135.0
Application Date
2019-01-29
Open (Notice) Number
CN109786442A
Date Available
2019-05-21
Status of Patent
实质审查 ; 权利转移
Legal Date
2019-06-14
Subtype
发明申请
SUSTech Authorship
First
Abstract
本发明实施例公开了一种高电子迁移率晶体管及其制作方法。其中高电子迁移率晶体管包括衬底;设置于衬底一侧依次层叠的应力缓冲层和外延层;设置于外延层背离衬底一侧的源极、漏极以及p型栅极层;设置于p型栅极层背离衬底一侧依次层叠的p型表面盖层、n型表面盖层以及栅极;其中,p型表面盖层中掺杂物的掺杂浓度小于p型栅极层中掺杂物的掺杂浓度。本发明实施例的技术方案,有效提高器件的栅极开启电压、栅极耐击穿电压、栅极输入电压摆幅以及栅极输入阻抗,使得器件的稳定性和可靠性得以改善。
Other Abstract
The embodiment of the invention discloses a transistor with high electron mobility and a manufacturing method thereof. The transistor with the high electron mobility comprises a substrate; a stress buffer layer and an epitaxial layer sequentially arranged on one side of the substrate; a source, a drain and a p-type grid layer arranged on one side, far away from the substrate, of the epitaxial layer; and a p-type surface cover layer, an n-type surface cover layer and a grid sequentially stacked on one side, far away from the substrate, of the p-type grid layer; wherein the doping density of a dopant in the p-type surface cover layer is less than the doping density of the dopant in the p-type grid layer. According to the technical scheme provided by the embodiment of the invention, the gridthreshold voltage, the grid breakdown voltage, the grid input voltage swing and the grid input impedance of the device are effectively improved, and the stability and reliability of the device are improved.
IPC Classification Number
H01L29/06 ; H01L29/778 ; H01L21/335
INPADOC Legal Status
(TRANSFER OF PATENT APPLICATION RIGHT)[2021-05-14][CN]
INPADOC Patent Family Count
1
Extended Patent Family Count
1
Priority date
2019-01-29
Patent Agent
孟金喆
Agency
北京品源专利代理有限公司
URL[Source Record]
Data Source
PatSnap
Document TypePatent
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/534345
DepartmentSUSTech Institute of Microelectronics
Recommended Citation
GB/T 7714
于洪宇,曾凡明. 一种高电子迁移率晶体管及其制作方法.
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