| Title | Highly Efficient Top-Emitting Quantum-Dot Light-Emitting Diodes with Record-Breaking External Quantum Efficiency of over 44.5% |
| Author | |
| Corresponding Author | Chen, Shuming |
| Publication Years | 2023-06-01
|
| DOI | |
| Source Title | |
| ISSN | 1863-8880
|
| EISSN | 1863-8899
|
| Abstract | Top-emitting (TE) quantum-dot light-emitting diodes (QLEDs) can exhibit higher light outcoupling efficiency (OCE) compared to bottom-emitting (BE) QLEDs due to the eliminated substrate mode and enhanced microcavity effect. In this study, TE QLEDs with an OCE of over 45% are realized by simultaneously optimizing the thicknesses of both indium-zinc-oxide (IZO) phase tuning layers and IZO top transparent electrodes. To reduce the resistance, the IZO top electrodes are equipped with an auxiliary metal electrode. Consequently, the red QLEDs demonstrate a high external quantum efficiency (EQE) of 38.2%. Furthermore, by applying a scattering layer on the IZO top electrode, the red QLEDs demonstrate record-breaking efficiencies of EQE 44.5%, power efficiency 92.2 lm W-1, and current efficiency 93.7 cd A(-1). The proposed device architecture and optimization strategy contribute to a new design scheme for the preparation of highly efficient QLEDs for displays and lighting applications. |
| Keywords | |
| URL | [Source Record] |
| Indexed By | |
| Language | English
|
| SUSTech Authorship | First
; Corresponding
|
| Funding Project | National Natural Science Foundation of China[62174075]
; Shenzhen Science and Technology Program["JCYJ20210324105400002","JCYJ20220530113809022"]
; Guangdong University Research Program[2020ZDZX3062]
|
| WOS Research Area | Optics
; Physics
|
| WOS Subject | Optics
; Physics, Applied
; Physics, Condensed Matter
|
| WOS Accession No | WOS:001013451700001
|
| Publisher | |
| Data Source | Web of Science
|
| Citation statistics |
Cited Times [WOS]:0
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/549220 |
| Department | Department of Electrical and Electronic Engineering |
| Affiliation | Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China |
| First Author Affilication | Department of Electrical and Electronic Engineering |
| Corresponding Author Affilication | Department of Electrical and Electronic Engineering |
| First Author's First Affilication | Department of Electrical and Electronic Engineering |
| Recommended Citation GB/T 7714 |
Li, Haotao,Zhou, Shiming,Chen, Shuming. Highly Efficient Top-Emitting Quantum-Dot Light-Emitting Diodes with Record-Breaking External Quantum Efficiency of over 44.5%[J]. LASER & PHOTONICS REVIEWS,2023.
|
| APA |
Li, Haotao,Zhou, Shiming,&Chen, Shuming.(2023).Highly Efficient Top-Emitting Quantum-Dot Light-Emitting Diodes with Record-Breaking External Quantum Efficiency of over 44.5%.LASER & PHOTONICS REVIEWS.
|
| MLA |
Li, Haotao,et al."Highly Efficient Top-Emitting Quantum-Dot Light-Emitting Diodes with Record-Breaking External Quantum Efficiency of over 44.5%".LASER & PHOTONICS REVIEWS (2023).
|
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