| Title | Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile |
| Author | |
| Corresponding Author | Ye, Huaiyu; Wang, Shaogang |
| Publication Years | 2023-07-01
|
| DOI | |
| Source Title | |
| EISSN | 2079-9292
|
| Volume | 12Issue:13 |
| Abstract | This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping profiles to adjust the resistance of the upper half P-pillar. A higher P-pillar resistance can slow down the sweep out speed of hole carriers when the body diode is turned off, thus resulting in a smoother reverse recovery current and reducing the current recovery rate (d(ir)/d(t)) from a peak to zero. The simulation results show that the reverse recovery peak current (I-rrm) of the two proposed devices decreased by 5% and 3%, respectively, compared to the conventional SJ. Additionally, the softness factor (S) increased by 64% and 55%, respectively. Furthermore, this study also demonstrates a trade-off relationship between static and reverse recovery characteristics with the adjustable doping profile, thus providing a guideline for actual application scenarios. |
| Keywords | |
| URL | [Source Record] |
| Indexed By | |
| Language | English
|
| SUSTech Authorship | First
; Corresponding
|
| Funding Project | Shenzhen Fundamental Research Program[JCYJ20200109140822796]
|
| WOS Research Area | Computer Science
; Engineering
; Physics
|
| WOS Subject | Computer Science, Information Systems
; Engineering, Electrical & Electronic
; Physics, Applied
|
| WOS Accession No | WOS:001029578400001
|
| Publisher | |
| Data Source | Web of Science
|
| Citation statistics |
Cited Times [WOS]:0
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/553311 |
| Department | SUSTech Institute of Microelectronics |
| Affiliation | 1.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China 2.Delft Univ Technol, Fac EEMCS, Mekelweg 4, NL-2628 CD Delft, Netherlands |
| First Author Affilication | SUSTech Institute of Microelectronics |
| Corresponding Author Affilication | SUSTech Institute of Microelectronics |
| First Author's First Affilication | SUSTech Institute of Microelectronics |
| Recommended Citation GB/T 7714 |
Liu, Ke,Tan, Chunjian,Li, Shizhen,et al. Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile[J]. ELECTRONICS,2023,12(13).
|
| APA |
Liu, Ke.,Tan, Chunjian.,Li, Shizhen.,Yuan, Wucheng.,Liu, Xu.,...&Wang, Shaogang.(2023).Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile.ELECTRONICS,12(13).
|
| MLA |
Liu, Ke,et al."Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile".ELECTRONICS 12.13(2023).
|
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