| Title | HFXZR1-XO2 Ferroelectric Thin Film Grain Size Tuning via Annealing Ramp Rate Achieving Endurance >109 Cycles, 2PR of 40.6μC/CM2, Write Voltage Down to 1.5 V, and Switching Speed of 30 NS |
| Author | |
| DOI | |
| Publication Years | 2023
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| ISBN | 979-8-3503-1101-3
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| Source Title | |
| Pages | 1-3
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| Conference Date | 26-27 June 2023
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| Conference Place | Shanghai, China
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| Keywords | |
| SUSTech Authorship | First
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| URL | [Source Record] |
| Data Source | IEEE
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| PDF url | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10219383 |
| Citation statistics |
Cited Times [WOS]:0
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| Document Type | Conference paper |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/559154 |
| Affiliation | 1.Southern University of Science and Technology, Shenzhen, China 2.Shanghai Jiao Tong University, Shanghai, China |
| First Author Affilication | Southern University of Science and Technology |
| First Author's First Affilication | Southern University of Science and Technology |
| Recommended Citation GB/T 7714 |
Zhixiong Li,Bing Zhou,Jiawei Xu,et al. HFXZR1-XO2 Ferroelectric Thin Film Grain Size Tuning via Annealing Ramp Rate Achieving Endurance >109 Cycles, 2PR of 40.6μC/CM2, Write Voltage Down to 1.5 V, and Switching Speed of 30 NS[C],2023:1-3.
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