| Title | Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures |
| Author | |
| Publication Years | 2023
|
| DOI | |
| Source Title | |
| ISSN | 1558-0563
|
| Volume | PPIssue:99Pages:1-1 |
| Keywords | |
| URL | [Source Record] |
| Indexed By | |
| SUSTech Authorship | First
|
| WOS Accession No | WOS:001080705500006
|
| ESI Research Field | ENGINEERING
|
| Data Source | IEEE
|
| PDF url | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10237276 |
| Citation statistics |
Cited Times [WOS]:0
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/559258 |
| Department | Department of Electrical and Electronic Engineering |
| Affiliation | 1.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China 2.Institute of Microelectronics, Key Laboratory of Microelectronic Devices and Integrated Technology, Chinese Academy of Sciences, Beijing, China |
| First Author Affilication | Department of Electrical and Electronic Engineering |
| First Author's First Affilication | Department of Electrical and Electronic Engineering |
| Recommended Citation GB/T 7714 |
Zuoheng Jiang,Xinyu Wang,Junlei Zhao,et al. Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures[J]. IEEE Electron Device Letters,2023,PP(99):1-1.
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| APA |
Zuoheng Jiang.,Xinyu Wang.,Junlei Zhao.,Junting Chen.,Jinjin Tang.,...&Mengyuan Hua.(2023).Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures.IEEE Electron Device Letters,PP(99),1-1.
|
| MLA |
Zuoheng Jiang,et al."Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures".IEEE Electron Device Letters PP.99(2023):1-1.
|
| Files in This Item: | There are no files associated with this item. | |||||
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