Understanding and Hindering the Electron Leakage in Green InP Quantum-Dot Light-Emitting Diodes

Zhang, Tianqi1,2,3; Zhao, Fangqing1,2,4; Liu, Pai1,2; Tan, Yangzhi1,2; Xiao, Xiangtian1,2; Wang, Zhaojin1,2; Wang, Weigao1,2; Wu, Dan5; Sun, Xiao Wei1,2; Hao, Jianhua4; Xing, Guichuan3; Wang, Kai1,2

2023-09-01

10.1002/adpr.202300146

ADVANCED PHOTONICS RESEARCH   Impact Factor & Quartile

2699-9293

["Indium phosphide (InP) quantum-dot light-emitting diodes (QLEDs) are considered as one of the most promising candidates for emerging displays owing to their good luminous performance and environmentally friendly properties. The operation of green InP QLEDs relies on the radiative recombination of electrically generated excitons, as in most QLEDs; however, the electrons injected into green InP QLEDs can easily pass through the quantum-dot (QD) layer, resulting in a carrier imbalance and low external quantum efficiency (EQE). Herein, the mechanism of electron leakage in green InP QLEDs is revealed. Based on comparative experiments and simulations of the carrier concentration distribution, the path of electron leakage is determined and it is found that the root cause is the large Fermi energy difference between green InP QDs and indium tin oxide (ITO). To solve this problem, an ultrathin LiF layer is applied to modify the work function of the ITO, which simultaneously hinders electron leakage and enhances hole injection. Benefiting from a more balanced carrier injection, the maximum EQE of green InP QLEDs improves from 4.70% to 9.14%. In these findings, a universal mechanism is provided for hindering electron leakage in green InP QLEDs, indicating the feasibility of developing highly efficient green InP QLEDs.","The mechanism of the electron leakage in green InP quantum-dot light-emitting diodes is revealed. An ultrathin LiF layer is introduced to modify the work function of indium tin oxide, which simultaneously hinders the electron leakage and enhances the hole injection.image & COPY; 2023 WILEY-VCH GmbH"]

carrier injection balance electron leakage indium phosphide quantum-dot light-emitting diodes (QLEDs)

ESCI

English

First ; Corresponding

National Key Research and Development Program of China[2022A1515011071] ; National Natural Science Foundation of China[JCYJ20210324104413036] ; Guangdong Basic and Applied Basic Research Foundation["JCYJ20190809152411655","20220717215521001"] ; Shenzhen Basic Research General Program[GDRC202110] ; Shenzhen Stable Support Research Foundation[FDCT-0044/2020/A1] ; Natural Science Foundation of Top Talent of Shenzhen Technology University (SZTU)["0082/2021/A2","MYRG2020-00151-IAPME"] ; Science and Technology Development Fund, Macao SAR[61935017] ; UMamp;apos;s research fund["62175268","2019B121205002"] ; Natural Science Foundation of China[SGDX2020110309360100]

Materials Science ; Optics

Materials Science, Multidisciplinary ; Optics

WOS:001059265200001

WILEY

Web of Science

1.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Key Lab Energy Convers & Storage Technol Minist Ed, Shenzhen 518055, Peoples R China
3.Univ Macao, Inst Appl Phys & Mat Engn, Macau 999078, Peoples R China
4.Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong 999077, Peoples R China
5.Shenzhen Technol Univ, Coll New Mat & New Energies, Shenzhen 518118, Peoples R China

Zhang, Tianqi,Zhao, Fangqing,Liu, Pai,et al. Understanding and Hindering the Electron Leakage in Green InP Quantum-Dot Light-Emitting Diodes[J]. ADVANCED PHOTONICS RESEARCH,2023.

Zhang, Tianqi.,Zhao, Fangqing.,Liu, Pai.,Tan, Yangzhi.,Xiao, Xiangtian.,...&Wang, Kai.(2023).Understanding and Hindering the Electron Leakage in Green InP Quantum-Dot Light-Emitting Diodes.ADVANCED PHOTONICS RESEARCH.

Zhang, Tianqi,et al."Understanding and Hindering the Electron Leakage in Green InP Quantum-Dot Light-Emitting Diodes".ADVANCED PHOTONICS RESEARCH (2023).