Crystal phase control in self-catalyzed GaAs nanowires grown on pre-etched Si substrates

Wang, Shan1,2,3; Li, Haolin1,2; Tang, Jilong1,3; Kang, Yubin4; Wang, Xiaohua1,3; Chen, Rui2; Wei, Zhipeng1

2023-09-01

10.1039/d3ma00358

MATERIALS ADVANCES   Impact Factor & Quartile

2633-5409

["Semiconductor nanowires play a very important role in optoelectronic devices due to their excellent photoelectric properties. However, the intermixing of zinc blende and wurtzite crystal phases limits the development of GaAs nanowires, and how to obtain pure phase GaAs nanowires has become a research hotspot. In this study, the Si substrate is pre-etched and pure ZB phase GaAs nanowires are obtained by changing the effective V/III flux ratio through the shadowing effect. A series of nanowires with different morphologies and optical properties were obtained by pre-etching the oxide layer on the Si substrate at different times. We observed that pure ZB phase GaAs nanowires with good verticality were obtained when the etching time was 3 s. The principles of crystal phase control and materials properties were discussed in detail. These results suggest that the growth method of pure phase nanowires reported herein can be applied to other low-dimensional materials, which could pave the way for future nanowire devices.","The size and density of the etched pinholes on the Si substrate influence the equivalent V/III flux ratio, which enables the growth of high-quality GaAs nanowires."]

ESCI

English

Corresponding

This work is supported by the National Natural Science Foundation of China (11574130, 12074045, 62027820, 61904017, and 11804335), the Science, Technology and Innovation Commission of Shenzhen Municipality (Projects No. JCYJ20220530113015035, JCYJ202103241["12074045","62027820","61904017","11804335","JCYJ20220530113015035"] ; National Natural Science Foundation of China["JCYJ20210324120204011","KQTD2015071710313656","XQNJJ-2018-18"] ; Science, Technology and Innovation Commission of Shenzhen Municipality[D17017] ; null[11574130]

Materials Science

Materials Science, Multidisciplinary

WOS:001059013700001

ROYAL SOC CHEMISTRY

Web of Science

1.Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China
3.Changchun Univ Sci & Technol, Zhongshan Inst, Semicond Laser & Applicat Lab, Zhongshan 528437, Peoples R China
4.China Jiliang Univ, Coll Opt & Elect Sci & Technol, Hangzhou 310018, Peoples R China

Wang, Shan,Li, Haolin,Tang, Jilong,et al. Crystal phase control in self-catalyzed GaAs nanowires grown on pre-etched Si substrates[J]. MATERIALS ADVANCES,2023.

Wang, Shan.,Li, Haolin.,Tang, Jilong.,Kang, Yubin.,Wang, Xiaohua.,...&Wei, Zhipeng.(2023).Crystal phase control in self-catalyzed GaAs nanowires grown on pre-etched Si substrates.MATERIALS ADVANCES.

Wang, Shan,et al."Crystal phase control in self-catalyzed GaAs nanowires grown on pre-etched Si substrates".MATERIALS ADVANCES (2023).