中文版 | English
Title

Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials

Author
Corresponding AuthorZhao,Junlei; Hua,Mengyuan
Publication Years
2023-12-01
DOI
Source Title
EISSN
2057-3960
Volume9Issue:1
Abstract
GaO is a wide-band gap semiconductor of emergent importance for applications in electronics and optoelectronics. However, vital information of the properties of complex coexisting GaO polymorphs and low-symmetry disordered structures is missing. We develop two types of machine-learning Gaussian approximation potentials (ML-GAPs) for GaO with high accuracy for β/κ/α/δ/γ polymorphs and generality for disordered stoichiometric structures. We release two versions of interatomic potentials in parallel, namely soapGAP and tabGAP, for high accuracy and exceeding speedup, respectively. Both potentials can reproduce the structural properties of all the five polymorphs in an exceptional agreement with ab initio results, meanwhile boost the computational efficiency with 5 × 10 and 2 × 10 computing speed increases compared to density functional theory, respectively. Moreover, the GaO liquid-solid phase transition proceeds in three different stages. This experimentally unrevealed complex dynamics can be understood in terms of distinctly different mobilities of O and Ga sublattices in the interfacial layer.
URL[Source Record]
Language
English
SUSTech Authorship
First ; Corresponding
Scopus EID
2-s2.0-85169666792
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/559417
DepartmentDepartment of Electrical and Electronic Engineering
Affiliation
1.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Department of Physics,University of Helsinki,Helsinki,P.O. Box 43,FI-00014,Finland
3.FCAI: Finnish Center for Artificial Intelligence,University of Helsinki,Helsinki,P.O. Box 43,FI-00014,Finland
4.School of Nuclear Science and Technology,Xi’an Jiaotong University,Xi’an,Shaanxi,710049,China
5.Helsinki Institute of Physics,University of Helsinki,Helsinki,P.O. Box 43,FI-00014,Finland
First Author AffilicationDepartment of Electrical and Electronic Engineering
Corresponding Author AffilicationDepartment of Electrical and Electronic Engineering
First Author's First AffilicationDepartment of Electrical and Electronic Engineering
Recommended Citation
GB/T 7714
Zhao,Junlei,Byggmästar,Jesper,He,Huan,et al. Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials[J]. npj Computational Materials,2023,9(1).
APA
Zhao,Junlei,Byggmästar,Jesper,He,Huan,Nordlund,Kai,Djurabekova,Flyura,&Hua,Mengyuan.(2023).Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials.npj Computational Materials,9(1).
MLA
Zhao,Junlei,et al."Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials".npj Computational Materials 9.1(2023).
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