Universal radiation tolerant semiconductor

Azarov，Alexander1; Fernández，Javier García1; Zhao，Junlei2; Djurabekova，Flyura3; He，Huan3; He，Ru3; Prytz，Øystein1; Vines，Lasse1; Bektas，Umutcan4; Chekhonin，Paul4; Klingner，Nico4; Hlawacek，Gregor4; Kuznetsov，Andrej1

2023-12-01

10.1038/s41467-023-40588-0

Nature Communications   Impact Factor & Quartile

2041-1723

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta (γ/β) double polymorph GaO structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in γ-GaO. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the β-to-γ GaO transformation, as a function of the increased disorder in β-GaO and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that γ/β double polymorph GaO structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors.

SCI

English

NI Journal Papers

Others

Norges Forskningsråd[197405];Norges Forskningsråd[295864];Norges Forskningsråd[322382];Norges Forskningsråd[337627];Academy of Finland[352518];European Cooperation in Science and Technology[FIT4NACA19140];

Science & Technology - Other Topics

Multidisciplinary Sciences

WOS:001050351300036

NATURE PORTFOLIO

2-s2.0-85167674560

Scopus

1.University of Oslo,Centre for Materials Science and Nanotechnology,Oslo,PO Box 1048 Blindern,N-0316,Norway
2.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
3.Department of Physics,University of Helsinki,Helsinki,P.O. Box 43,FI-00014,Finland
4.Helmholtz-Zentrum Dresden-Rossendorf,Dresden,D-01328,Germany

Azarov，Alexander,Fernández，Javier García,Zhao，Junlei,et al. Universal radiation tolerant semiconductor[J]. Nature Communications,2023,14(1).

Azarov，Alexander.,Fernández，Javier García.,Zhao，Junlei.,Djurabekova，Flyura.,He，Huan.,...&Kuznetsov，Andrej.(2023).Universal radiation tolerant semiconductor.Nature Communications,14(1).

Azarov，Alexander,et al."Universal radiation tolerant semiconductor".Nature Communications 14.1(2023).