Curvature-dependent strain-induced photoluminescence modulations in flexible Er-doped Pb0.98La0.02Zr0.95Ti0.05O3 antiferroelectric thin films prepared by the sol-gel method

Huang，Lijuan1; Xiong，Rui1; Xie，Jiaxing1; Liu，Qi2; Zhang，Yu1; Yang，Qing1; Zhao，Chunlin1; Wu，Xiao1; Lin，Tengfei1; Lin，Cong1; Gao，Min1; Sa，Baisheng1

2023-12-01

10.1016/j.jeurceramsoc.2023.07.024

Journal of the European Ceramic Society   Impact Factor & Quartile

0955-2219

1873-619X

Tunable photoluminescence (PL) has wide applications in optical waveguides and communication. Since the PL intensity is strongly dependent on the crystal field symmetry, curvature-dependent strain-induced PL modulation is expected in flexible antiferroelectric (AFE) thin film materials. Here, flexible Er-doped PbLaZrTiO (PLZT) AFE thin films were prepared via the sol-gel method. A giant and reversible PL intensity modulation (482%) was achieved during the bending process. Based on density functional theory (DFT) calculations and Raman spectra measurements, the relationship amongst the curvature-dependent strains, crystal structure, and PL modulation was discussed. The induced strain leads to lattice distortion and even a phase transition, both of which contribute to the reduction in crystal symmetry and thus significantly enhance the PL intensity.

Antiferroelectric thin film Flexibility Phase transition Photoluminescence Strain

SCI

English

Others

National Natural Science Foundation of China[12104093];Natural Science Foundation of Fujian Province[2021J05122];Natural Science Foundation of Fujian Province[2021J05123];National Natural Science Foundation of China[52072075];National Natural Science Foundation of China[52102126];

WOS:001097434100001

MATERIALS SCIENCE

2-s2.0-85166941406

Scopus

1.College of Materials Science and Engineering,Fuzhou University,Fuzhou,350108,China
2.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China

Huang，Lijuan,Xiong，Rui,Xie，Jiaxing,et al. Curvature-dependent strain-induced photoluminescence modulations in flexible Er-doped Pb0.98La0.02Zr0.95Ti0.05O3 antiferroelectric thin films prepared by the sol-gel method[J]. Journal of the European Ceramic Society,2023,43(16):7455-7462.

Huang，Lijuan.,Xiong，Rui.,Xie，Jiaxing.,Liu，Qi.,Zhang，Yu.,...&Sa，Baisheng.(2023).Curvature-dependent strain-induced photoluminescence modulations in flexible Er-doped Pb0.98La0.02Zr0.95Ti0.05O3 antiferroelectric thin films prepared by the sol-gel method.Journal of the European Ceramic Society,43(16),7455-7462.

Huang，Lijuan,et al."Curvature-dependent strain-induced photoluminescence modulations in flexible Er-doped Pb0.98La0.02Zr0.95Ti0.05O3 antiferroelectric thin films prepared by the sol-gel method".Journal of the European Ceramic Society 43.16(2023):7455-7462.