Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction
|Corresponding Author||Wang，Xiaoyi; Qiu，Yang|
The investigation of chemical reactions during ion irradiation is a frontier for the study of the ion-material interaction. In order to probe the chemistry of ion produced nanoclusters, valence electron energy loss spectroscopy (VEELS) was exploited to investigate Ga ion damage in AlO, InP, and InGaAs, where each target material has been shown to react differently to the interaction between impinging ions, recoil atoms, and vacancies: metallic Ga, ternary InGaP clusters, and metallic In clusters are formed in AlO, InP, and InGaAs, respectively. Supporting simulations based on Monte Carlo and crystal orbital Hamiltonian calculations indicate that the chemical constitution of cascade induced nano-precipitates is a result of a competition between interstitial/vacancy consumption rates and preferential bond formation due to differing bond strengths.
NI Journal Papers
|WOS Accession No|
|ESI Research Field|
Cited Times [WOS]:0
|Document Type||Journal Article|
|Department||Public Testing and Analysis Center|
1.Southwest Minzu University,State Ethnic Affairs Commission,Chengdu,610041,China
2.NCS Testing Technology Co. Ltd,Chengdu,610041,China
3.SUSTech Core Research Facilities,Southern University of Science and Technology,Shenzhen,518055,China
4.Key Laboratory of Radiation Physics and Technology of Ministry of Education,Institute of Nuclear Science and Technology,Sichuan University,Chengdu,610064,China
5.College of Physical Science and Technology,Sichuan University,Chengdu,610064,China
6.Laboratory for Shock Wave and Detonation Physics,Institute of Fluid Physics,China Academy of Engineering Physics,Sichuan,Mianyang ,621900,China
7.Sichuan Research Center of New Materials,Chengdu,596 Yinhe Road, Shuangliu ,610200,China
9.Institute of Chemical Materials,China Academy of Engineering Physics,Mianyang,621900,China
10.Department Electronic and Electrical Engineering,University of Sheffield,Sheffield,Mappin St.,S1 3JD,United Kingdom
|Corresponding Author Affilication||Public Testing and Analysis Center|
|First Author's First Affilication||Public Testing and Analysis Center|
Ma，Zhenyu,Zhang，Xin,Liu，Pu,et al. Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction[J]. Applied Physics Letters,2023,123(10).
Ma，Zhenyu.,Zhang，Xin.,Liu，Pu.,Deng，Yong.,Hu，Wenyu.,...&Walther，Thomas.(2023).Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction.Applied Physics Letters,123(10).
Ma，Zhenyu,et al."Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction".Applied Physics Letters 123.10(2023).
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