中文版 | English
Title

Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction

Author
Corresponding AuthorWang,Xiaoyi; Qiu,Yang
Publication Years
2023-09-04
DOI
Source Title
ISSN
0003-6951
Volume123Issue:10
Abstract
The investigation of chemical reactions during ion irradiation is a frontier for the study of the ion-material interaction. In order to probe the chemistry of ion produced nanoclusters, valence electron energy loss spectroscopy (VEELS) was exploited to investigate Ga ion damage in AlO, InP, and InGaAs, where each target material has been shown to react differently to the interaction between impinging ions, recoil atoms, and vacancies: metallic Ga, ternary InGaP clusters, and metallic In clusters are formed in AlO, InP, and InGaAs, respectively. Supporting simulations based on Monte Carlo and crystal orbital Hamiltonian calculations indicate that the chemical constitution of cascade induced nano-precipitates is a result of a competition between interstitial/vacancy consumption rates and preferential bond formation due to differing bond strengths.
URL[Source Record]
Indexed By
Language
English
Important Publications
NI Journal Papers
SUSTech Authorship
Corresponding
WOS Accession No
WOS:001074765700008
ESI Research Field
PHYSICS
Scopus EID
2-s2.0-85170825835
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/559631
DepartmentPublic Testing and Analysis Center
Affiliation
1.Southwest Minzu University,State Ethnic Affairs Commission,Chengdu,610041,China
2.NCS Testing Technology Co. Ltd,Chengdu,610041,China
3.SUSTech Core Research Facilities,Southern University of Science and Technology,Shenzhen,518055,China
4.Key Laboratory of Radiation Physics and Technology of Ministry of Education,Institute of Nuclear Science and Technology,Sichuan University,Chengdu,610064,China
5.College of Physical Science and Technology,Sichuan University,Chengdu,610064,China
6.Laboratory for Shock Wave and Detonation Physics,Institute of Fluid Physics,China Academy of Engineering Physics,Sichuan,Mianyang ,621900,China
7.Sichuan Research Center of New Materials,Chengdu,596 Yinhe Road, Shuangliu ,610200,China
8.Yongjiang Laboratory,Ningbo,315000,China
9.Institute of Chemical Materials,China Academy of Engineering Physics,Mianyang,621900,China
10.Department Electronic and Electrical Engineering,University of Sheffield,Sheffield,Mappin St.,S1 3JD,United Kingdom
Corresponding Author AffilicationPublic Testing and Analysis Center
First Author's First AffilicationPublic Testing and Analysis Center
Recommended Citation
GB/T 7714
Ma,Zhenyu,Zhang,Xin,Liu,Pu,et al. Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction[J]. Applied Physics Letters,2023,123(10).
APA
Ma,Zhenyu.,Zhang,Xin.,Liu,Pu.,Deng,Yong.,Hu,Wenyu.,...&Walther,Thomas.(2023).Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction.Applied Physics Letters,123(10).
MLA
Ma,Zhenyu,et al."Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction".Applied Physics Letters 123.10(2023).
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