中文版 | English
Title

A full high-definition quantum dot light-emitting diode-on-silicon microdisplay

Author
Corresponding AuthorSun,Xiao Wei
Publication Years
2023-09-01
DOI
Source Title
ISSN
1071-0922
EISSN
1938-3657
Volume31Issue:9Pages:548-558
Abstract
We report a 0.39-in. quantum dot light-emitting diode (QLED) microdisplay with full high-definition (FHD, 1920 × 1080) resolution by integrating a red top-emitting QLED on a complementary metal–oxide–semiconductor (CMOS) backplane. By optimizing the microcavity structure and constructing a suitable energy-level structure for the QLED devices, the performance of the large-area (4.9 × 8.7 mm) top-emitting device with normal structure reached 13,936 cd/m of brightness at 5-V bias with 13.3% external quantum efficiency (EQE). Notably, the optimal device showed a low turn-on voltage of 1.7 V, which matched well the voltage output of the CMOS backplane. Our work demonstrates the great promise of QLED microdisplays for applications in head-mounted augmented reality/virtual reality (AR/VR).
Keywords
URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
First ; Corresponding
Funding Project
National Key Research and Development Program of China[2021YFB3602703];National Key Research and Development Program of China[2022YFB3602903];National Key Research and Development Program of China[2022YFB3606504];National Natural Science Foundation of China[62122034];Shenzhen Science and Technology Innovation Program[JCYJ20220818100411025];Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting[ZDSYS201707281632549];
WOS Research Area
Engineering ; Materials Science ; Optics ; Physics
WOS Subject
Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Optics ; Physics, Applied
WOS Accession No
WOS:001060115600001
Publisher
Scopus EID
2-s2.0-85168864576
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/559650
DepartmentSouthern University of Science and Technology
工学院_电子与电气工程系
Affiliation
1.Institute of Nanoscience and Applications,Southern University of Science and Technology,Shenzhen,China
2.Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology),Ministry of Education,Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices,and Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,China
3.Joint International Research Laboratory of Information Display and Visualization,Southeast University,Nanjing,China
4.Nanjing SmartVision Electronics Co.,Ltd.,Nanjing,China
5.Shenzhen Planck Innovation Technologies Co. Ltd.,Shenzhen,China
First Author AffilicationSouthern University of Science and Technology;  Department of Electrical and Electronic Engineering
Corresponding Author AffilicationSouthern University of Science and Technology;  Department of Electrical and Electronic Engineering
First Author's First AffilicationSouthern University of Science and Technology
Recommended Citation
GB/T 7714
Jia,Siqi,Li,Depeng,Chen,Yixing,et al. A full high-definition quantum dot light-emitting diode-on-silicon microdisplay[J]. Journal of the Society for Information Display,2023,31(9):548-558.
APA
Jia,Siqi.,Li,Depeng.,Chen,Yixing.,Mei,Guanding.,Ma,Jingrui.,...&Sun,Xiao Wei.(2023).A full high-definition quantum dot light-emitting diode-on-silicon microdisplay.Journal of the Society for Information Display,31(9),548-558.
MLA
Jia,Siqi,et al."A full high-definition quantum dot light-emitting diode-on-silicon microdisplay".Journal of the Society for Information Display 31.9(2023):548-558.
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