Title | A full high-definition quantum dot light-emitting diode-on-silicon microdisplay |
Author | |
Corresponding Author | Sun,Xiao Wei |
Publication Years | 2023-09-01
|
DOI | |
Source Title | |
ISSN | 1071-0922
|
EISSN | 1938-3657
|
Volume | 31Issue:9Pages:548-558 |
Abstract | We report a 0.39-in. quantum dot light-emitting diode (QLED) microdisplay with full high-definition (FHD, 1920 × 1080) resolution by integrating a red top-emitting QLED on a complementary metal–oxide–semiconductor (CMOS) backplane. By optimizing the microcavity structure and constructing a suitable energy-level structure for the QLED devices, the performance of the large-area (4.9 × 8.7 mm) top-emitting device with normal structure reached 13,936 cd/m of brightness at 5-V bias with 13.3% external quantum efficiency (EQE). Notably, the optimal device showed a low turn-on voltage of 1.7 V, which matched well the voltage output of the CMOS backplane. Our work demonstrates the great promise of QLED microdisplays for applications in head-mounted augmented reality/virtual reality (AR/VR). |
Keywords | |
URL | [Source Record] |
Indexed By | |
Language | English
|
SUSTech Authorship | First
; Corresponding
|
Funding Project | National Key Research and Development Program of China[2021YFB3602703];National Key Research and Development Program of China[2022YFB3602903];National Key Research and Development Program of China[2022YFB3606504];National Natural Science Foundation of China[62122034];Shenzhen Science and Technology Innovation Program[JCYJ20220818100411025];Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting[ZDSYS201707281632549];
|
WOS Research Area | Engineering
; Materials Science
; Optics
; Physics
|
WOS Subject | Engineering, Electrical & Electronic
; Materials Science, Multidisciplinary
; Optics
; Physics, Applied
|
WOS Accession No | WOS:001060115600001
|
Publisher | |
Scopus EID | 2-s2.0-85168864576
|
Data Source | Scopus
|
Citation statistics |
Cited Times [WOS]:0
|
Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/559650 |
Department | Southern University of Science and Technology 工学院_电子与电气工程系 |
Affiliation | 1.Institute of Nanoscience and Applications,Southern University of Science and Technology,Shenzhen,China 2.Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology),Ministry of Education,Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices,and Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,China 3.Joint International Research Laboratory of Information Display and Visualization,Southeast University,Nanjing,China 4.Nanjing SmartVision Electronics Co.,Ltd.,Nanjing,China 5.Shenzhen Planck Innovation Technologies Co. Ltd.,Shenzhen,China |
First Author Affilication | Southern University of Science and Technology; Department of Electrical and Electronic Engineering |
Corresponding Author Affilication | Southern University of Science and Technology; Department of Electrical and Electronic Engineering |
First Author's First Affilication | Southern University of Science and Technology |
Recommended Citation GB/T 7714 |
Jia,Siqi,Li,Depeng,Chen,Yixing,et al. A full high-definition quantum dot light-emitting diode-on-silicon microdisplay[J]. Journal of the Society for Information Display,2023,31(9):548-558.
|
APA |
Jia,Siqi.,Li,Depeng.,Chen,Yixing.,Mei,Guanding.,Ma,Jingrui.,...&Sun,Xiao Wei.(2023).A full high-definition quantum dot light-emitting diode-on-silicon microdisplay.Journal of the Society for Information Display,31(9),548-558.
|
MLA |
Jia,Siqi,et al."A full high-definition quantum dot light-emitting diode-on-silicon microdisplay".Journal of the Society for Information Display 31.9(2023):548-558.
|
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