Theoretical study of small signal modulation behavior of Fabry-Perot germanium-on-silicon lasers
This work investigated the modulation responses of Fabry-Perot Ge-on-Si lasers by modeling and simulations. The 3 dB bandwidth dependence on the structure parameters such as poly-Si cladding thickness, Ge cavity width and thickness, and minority carrier lifetime were studied. A 3 dB bandwidth of 33.94 GHz at a biasing current of 270.5 mA is predicted after Ge laser structure optimization with a defect limited carrier lifetime of 1 ns. The eye diagrams simulated show a stable eye-opening window at 20 Gb·s NRZ. The improvement to 10 ns minority carrier lifetime would reduce the threshold current to 6.85 mA, and increase the 3 dB bandwidth to 36.89 GHz.
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|Document Type||Journal Article|
|Department||Department of Materials Science and Engineering|
1.Department of Materials Engineering,the University of British Columbia,Vancouver,V6T 1Z4,Canada
2.Department of Material Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
3.Crosslight Software Inc.,Vancouver,V5M 2A4,Canada
|First Author Affilication||Department of Materials Science and Engineering|
Zhu，Ying,Wang，Liming,Li，Zhiqiang,et al. Theoretical study of small signal modulation behavior of Fabry-Perot germanium-on-silicon lasers[J]. Physica Scripta,2023,98(9).
Zhu，Ying,Wang，Liming,Li，Zhiqiang,Wen，Ruitao,&Xia，Guangrui.(2023).Theoretical study of small signal modulation behavior of Fabry-Perot germanium-on-silicon lasers.Physica Scripta,98(9).
Zhu，Ying,et al."Theoretical study of small signal modulation behavior of Fabry-Perot germanium-on-silicon lasers".Physica Scripta 98.9(2023).
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