Approaching high thermoelectric performance in p-type Cu3SbS4-based materials by rational electronic and nano/microstructural engineering

Yang，Jingwen1; Shi，Xiao Lei2; Yang，Qishuo3,4; Shen，Weixia1; Li，Meng2; Zhang，Zhuangfei1; Liu，Wei Di1,5; Fang，Chao1; Mao，Yuanqing3,6; Wang，Qianqian1; Chen，Liangchao1; Wan，Biao1; Zhang，Yuewen1; Jia，Xiaopeng1; Chen，Zhi Gang2,3

2023-08-01

10.1016/j.cej.2023.143965

Chemical Engineering Journal   Impact Factor & Quartile

1385-8947

Due to the eco-friendly and earth-abundant features, p-type CuSbS-based sulfides have shown great potential as cost-effective thermoelectric materials for practical applications in power generation and refrigeration. However, low electrical conductivities of p-type CuSbS-based sulfides result in insufficient thermoelectric properties. In this work, a high average ZT of 0.45 and a maximum ZT of 0.85 at 623 K were obtained in CuSbS-based sulfides through rational electronic and nano/microstructural engineering, achieved by mechanical alloying combined with fast spark plasma sintering techniques. Guided by theoretical calculations, we first study the physical properties of CuSbSSe to explore the best composition (CuSbSSe) that balances high thermoelectric performance, high thermal stability, and high mechanical performance. Based on this composition, we employed 4 % p-type AgSnSe with a narrow bandgap of ∼0.15 eV to further boost the electrical conductivity of CuSbSSe, generating a high power factor of 12.65 μW cm K at 623 K. In addition, comprehensive nano/microstructural characterizations indicate that a combination of dense grain boundaries, phase boundaries, and multi-dimensional lattice defects acts as rich sources to intensely scatter multi-frequency phonons, leading to a decreased thermal conductivity of 0.93 W m K at 623 K. This work provides a new route to boost the thermoelectric properties of sulfides for practical applications.

AgSnSe2 Calculation Cu3SbS4 Nanoinclusion Structure Thermoelectric

English

Others

National Natural Science Foundation of China[12004341];National Natural Science Foundation of China[12004342];National Natural Science Foundation of China[12104408];National Natural Science Foundation of China[12204419];National Natural Science Foundation of China[12274372];National Natural Science Foundation of China[12274373];

ENGINEERING

2-s2.0-85161717824

Scopus

1.Key Laboratory of Material Physics of Ministry of Education,School of Physics and Microelectronics,Zhengzhou University,Zhengzhou,450052,China
2.School of Chemistry and Physics,Queensland University of Technology,Brisbane,4001,Australia
3.School of Mechanical and Ming Engineering,The University of Queensland,Brisbane,4072,Australia
4.Department of Physics and Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
5.Australian Institute for Bioengineering and Nanotechnology,The University of Queensland,Brisbane,4072,Australia
6.Department of Physics and Guangdong Provincial Key Laboratory of Computational Science and Material Design,Southern University of Science and Technology,Shenzhen,518055,China

Yang，Jingwen,Shi，Xiao Lei,Yang，Qishuo,et al. Approaching high thermoelectric performance in p-type Cu3SbS4-based materials by rational electronic and nano/microstructural engineering[J]. Chemical Engineering Journal,2023,469.

Yang，Jingwen.,Shi，Xiao Lei.,Yang，Qishuo.,Shen，Weixia.,Li，Meng.,...&Chen，Zhi Gang.(2023).Approaching high thermoelectric performance in p-type Cu3SbS4-based materials by rational electronic and nano/microstructural engineering.Chemical Engineering Journal,469.

Yang，Jingwen,et al."Approaching high thermoelectric performance in p-type Cu3SbS4-based materials by rational electronic and nano/microstructural engineering".Chemical Engineering Journal 469(2023).