中文版 | English
Title

Rational design of quantum spin Hall phase in type-III van der Waals heterostructures

Author
Corresponding AuthorWu,Xiaozhi
Publication Years
2023-07-24
DOI
Source Title
ISSN
0003-6951
EISSN
1077-3118
Volume123Issue:4
Abstract
Van der Waals heterostructures (vdWHs) are effective platforms for exploring various attractive topological phases. Here, based on the low-energy effective k · p model, we propose that the type-III vdWHs, which were previously considered as only belonging to trivial metallic phases, can realize the nontrivial quantum spin Hall (QSH) effect. We reveal that the band inversion of such a QSH phase is attributed to the band alignment of momentum space matching, i.e., the conduction band minimum and valence band maximum located at the same point in momentum space near the Fermi level. Moreover, using first-principles calculations, we show that the Mg(OH)/GaO heterobilayer, a typical type-III vdWH with high thermodynamic stability, is an ideal candidate for achieving our strategy. We further calculate the helical gapless edge states and quantized spin Hall conductance, which are visible inside the global bandgap, thus facilitating the experimental observation. Our work offers a promising pathway for realizing the QSH phase in natural materials.
URL[Source Record]
Indexed By
Language
English
Important Publications
NI Journal Papers ; NI论文
SUSTech Authorship
Others
Funding Project
Natural Science Foundation of China (NSFC)["12174040","12147102"] ; Chongqing Natural Science Foundation[cstc2020jcyj-msxmX0118]
WOS Research Area
Physics
WOS Subject
Physics, Applied
WOS Accession No
WOS:001035443400017
Publisher
ESI Research Field
PHYSICS
Scopus EID
2-s2.0-85166469010
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/559809
DepartmentCenter for Computational Science and Engineering
Affiliation
1.Institute for Structure and Function,Department of Physics,Chongqing University,Chongqing,401331,China
2.International School of Microelectronics,Dongguan University of Technology,Dongguan,523000,China
3.Center for Computational Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
4.Songshan Lake Materials Laboratory,Dongguan,Guangdong,523000,China
5.Chongqing Key Laboratory for Strongly Coupled Physics,Chongqing,401331,China
6.Center of Quantum Materials and Devices,Chongqing University,Chongqing,401331,China
Recommended Citation
GB/T 7714
Xiao,Xiaoliang,Xie,Zijuan,Kong,Weixiang,et al. Rational design of quantum spin Hall phase in type-III van der Waals heterostructures[J]. Applied Physics Letters,2023,123(4).
APA
Xiao,Xiaoliang.,Xie,Zijuan.,Kong,Weixiang.,Fan,Jing.,Chen,Zhongjia.,...&Wu,Xiaozhi.(2023).Rational design of quantum spin Hall phase in type-III van der Waals heterostructures.Applied Physics Letters,123(4).
MLA
Xiao,Xiaoliang,et al."Rational design of quantum spin Hall phase in type-III van der Waals heterostructures".Applied Physics Letters 123.4(2023).
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