Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Zhang，Junqiu1; Xia，Yipu1; Yu，Zhoubin2; Yue，Xingyu1; Jin，Yuanjun1; Yuan，Mengfei1; Feng，Yue3; Li，Bin3; Wang，Bo2; Ho，Wingkin1; Liu，Chang3; Xu，Hu3; Jin，Chuanhong2; Xie，Maohai1

2023-07-01

10.1063/5.0152247

APL Materials   Impact Factor & Quartile

2166-532X

2166-532X

Monolayer (ML) transition-metal dichalcogenides (TMDs) have attracted a lot of research interest in recent years due to their many interesting properties as well as their application promises. Depending on the specific combinations of metals (e.g., Mo and W) with chalcogen elements (e.g., S, Se, and Te), binary TMDs exhibit a wide spectrum of physical characteristics, e.g., from metal to semiconductor and/or superconductor. Extension from binary to ternary compounds and alloys may offer even wider variations of properties and are thus of interest from both fundamental and practical points of view. In this work, we substitute Mo for niobium (Nb) and rhenium (Re) in ML MoSe during molecular-beam epitaxy and probe their effects on structural and electrical properties. We find that low-concentration Nb and Re in ML-MoSe are both shallow dopants, with Re being an electron donor and Nb acceptor, respectively. By changing Nb(Re)/Mo flux ratios, we can effectively tune the Fermi level by varying electron or hole concentrations in MoSe. On the other hand, both Nb and Re are found to cause mirror-twin domain boundary defects to proliferate in MoSe

SCI

English

Others

Research Grant Council of the Hong Kong Special Administrative Region, China["AoE/P-701/20","N_HKU732"] ; National Natural Science Foundation of China["61721005","51761165024"] ; Zhejiang Provincial Natural Science Foundation[LD19E020002]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:001031327500003

AIP Publishing

2-s2.0-85165534116

Scopus

1.Physics Department,Guangdong-Hong Kong Joint Laboratory of Quantum Matter,The University of Hong Kong,Hong Kong
2.State Key Laboratory of Silicon and Advanced Semiconductor Materials,School of Materials and Engineering,Zhejiang University,Hangzhou,Zhejiang,310027,China
3.Department of Physics,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China

Zhang，Junqiu,Xia，Yipu,Yu，Zhoubin,et al. Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation[J]. APL Materials,2023,11(7).

Zhang，Junqiu.,Xia，Yipu.,Yu，Zhoubin.,Yue，Xingyu.,Jin，Yuanjun.,...&Xie，Maohai.(2023).Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation.APL Materials,11(7).

Zhang，Junqiu,et al."Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation".APL Materials 11.7(2023).