中文版 | English
Title

Staggered-layer-boosted flexible Bi2Te3 films with high thermoelectric performance

Author
Corresponding AuthorHe,Jiaqing
Publication Years
2023
DOI
Source Title
ISSN
1748-3387
EISSN
1748-3395
Abstract
Room-temperature bismuth telluride (BiTe) thermoelectrics are promising candidates for low-grade heat harvesting. However, the brittleness and inflexibility of BiTe are far reaching and bring about lifelong drawbacks. Here we demonstrate good pliability over 1,000 bending cycles and high power factors of 4.2 (p type) and 4.6 (n type) mW m K in BiTe-based films that were exfoliated from corresponding single crystals. This unprecedented bendability was ascribed to the in situ observed staggered-layer structure that was spontaneously formed during the fabrication to promote stress propagation whilst maintaining good electrical conductivity. Unexpectedly, the donor-like staggered layer rarely affected the carrier transport of the films, thus maintaining its superior thermoelectric performance. Our flexible generator showed a high normalized power density of 321 W m with a temperature difference of 60 K. These high performances in supple thermoelectric films not only offer useful paradigms for wearable electronics, but also provide key insights into structure–property manipulation in inorganic semiconductors.
URL[Source Record]
Indexed By
Language
English
Important Publications
NI Journal Papers ; NI论文
SUSTech Authorship
First ; Corresponding
Funding Project
National Natural Science Foundation of China[11934007] ; Science and Technology Innovation Committee Foundation of Shenzhen["JCYJ20190809145205497","JCYJ20200109141205978"] ; Outstanding Talents Training Fund in Shenzhen[202108]
WOS Research Area
Science & Technology - Other Topics ; Materials Science
WOS Subject
Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS Accession No
WOS:001037371100003
Publisher
Scopus EID
2-s2.0-85166023527
Data Source
Scopus
Citation statistics
Cited Times [WOS]:4
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/560200
DepartmentDepartment of Physics
Affiliation
1.Shenzhen Key Laboratory of Thermoelectric Materials,Department of Physics,Southern University of Science and Technology,Shenzhen,China
2.International School of Microelectronics,Dongguan University of Technology,Dongguan,China
3.Department of Electrical and Computer Engineering,National University of Singapore,Singapore,Singapore
4.Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics,Wuhan University of Technology,Wuhan,China
5.Guangdong–Hong Kong–Macao Joint Laboratory for Photonic–Thermal–Electrical Energy Materials and Devices,Southern University of Science and Technology,Shenzhen,China
First Author AffilicationDepartment of Physics
Corresponding Author AffilicationDepartment of Physics;  Southern University of Science and Technology
First Author's First AffilicationDepartment of Physics
Recommended Citation
GB/T 7714
Lu,Yao,Zhou,Yi,Wang,Wu,et al. Staggered-layer-boosted flexible Bi2Te3 films with high thermoelectric performance[J]. Nature Nanotechnology,2023.
APA
Lu,Yao.,Zhou,Yi.,Wang,Wu.,Hu,Mingyuan.,Huang,Xiege.,...&He,Jiaqing.(2023).Staggered-layer-boosted flexible Bi2Te3 films with high thermoelectric performance.Nature Nanotechnology.
MLA
Lu,Yao,et al."Staggered-layer-boosted flexible Bi2Te3 films with high thermoelectric performance".Nature Nanotechnology (2023).
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