Title | Staggered-layer-boosted flexible Bi2Te3 films with high thermoelectric performance |
Author | |
Corresponding Author | He,Jiaqing |
Publication Years | 2023
|
DOI | |
Source Title | |
ISSN | 1748-3387
|
EISSN | 1748-3395
|
Abstract | Room-temperature bismuth telluride (BiTe) thermoelectrics are promising candidates for low-grade heat harvesting. However, the brittleness and inflexibility of BiTe are far reaching and bring about lifelong drawbacks. Here we demonstrate good pliability over 1,000 bending cycles and high power factors of 4.2 (p type) and 4.6 (n type) mW m K in BiTe-based films that were exfoliated from corresponding single crystals. This unprecedented bendability was ascribed to the in situ observed staggered-layer structure that was spontaneously formed during the fabrication to promote stress propagation whilst maintaining good electrical conductivity. Unexpectedly, the donor-like staggered layer rarely affected the carrier transport of the films, thus maintaining its superior thermoelectric performance. Our flexible generator showed a high normalized power density of 321 W m with a temperature difference of 60 K. These high performances in supple thermoelectric films not only offer useful paradigms for wearable electronics, but also provide key insights into structure–property manipulation in inorganic semiconductors. |
URL | [Source Record] |
Indexed By | |
Language | English
|
Important Publications | NI Journal Papers
; NI论文
|
SUSTech Authorship | First
; Corresponding
|
Funding Project | National Natural Science Foundation of China[11934007]
; Science and Technology Innovation Committee Foundation of Shenzhen["JCYJ20190809145205497","JCYJ20200109141205978"]
; Outstanding Talents Training Fund in Shenzhen[202108]
|
WOS Research Area | Science & Technology - Other Topics
; Materials Science
|
WOS Subject | Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
|
WOS Accession No | WOS:001037371100003
|
Publisher | |
Scopus EID | 2-s2.0-85166023527
|
Data Source | Scopus
|
Citation statistics |
Cited Times [WOS]:4
|
Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/560200 |
Department | Department of Physics |
Affiliation | 1.Shenzhen Key Laboratory of Thermoelectric Materials,Department of Physics,Southern University of Science and Technology,Shenzhen,China 2.International School of Microelectronics,Dongguan University of Technology,Dongguan,China 3.Department of Electrical and Computer Engineering,National University of Singapore,Singapore,Singapore 4.Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics,Wuhan University of Technology,Wuhan,China 5.Guangdong–Hong Kong–Macao Joint Laboratory for Photonic–Thermal–Electrical Energy Materials and Devices,Southern University of Science and Technology,Shenzhen,China |
First Author Affilication | Department of Physics |
Corresponding Author Affilication | Department of Physics; Southern University of Science and Technology |
First Author's First Affilication | Department of Physics |
Recommended Citation GB/T 7714 |
Lu,Yao,Zhou,Yi,Wang,Wu,et al. Staggered-layer-boosted flexible Bi2Te3 films with high thermoelectric performance[J]. Nature Nanotechnology,2023.
|
APA |
Lu,Yao.,Zhou,Yi.,Wang,Wu.,Hu,Mingyuan.,Huang,Xiege.,...&He,Jiaqing.(2023).Staggered-layer-boosted flexible Bi2Te3 films with high thermoelectric performance.Nature Nanotechnology.
|
MLA |
Lu,Yao,et al."Staggered-layer-boosted flexible Bi2Te3 films with high thermoelectric performance".Nature Nanotechnology (2023).
|
Files in This Item: | There are no files associated with this item. |
|
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment