Si/Organic Integrated Narrowband Near-Infrared Photodetector
|Corresponding Author||Fu，H. Y.; Yu，Cunjiang; Wei，Guodan|
Spectrally selective narrowband photodetection is critical for near-infrared (NIR) imaging applications, such as for communicationand night-vision utilities. It is a long-standing challenge for detectors based on silicon, to achieve narrowband photodetection without integrating any optical filters. Here, this work demonstrates a NIR nanograting Si/organic (PBDBT-DTBT:BTP-4F) heterojunction photodetector (PD), which for the first time obtains the full-width-at-half-maximum (FWHM) of only 26 nm and fast response of 74 µs at 895 nm. The response peak can be successfully tailored from 895 to 977 nm. The sharp and narrow response NIR peak is inherently attributed to the coherent overlapping between the NIR transmission spectrum of organic layer and diffraction enhanced absorption peak of patterned nanograting Si substrates. The finite difference time domain (FDTD) physics calculation confirms the resonant enhancement peaks, which is well consistent with the experiment results. Meanwhile, the relative characterization indicates that the introduction of the organic film can promote carrier transfer and charge collection, facilitating efficient photocurrent generation. This new device design strategy opens up a new window in developing low-cost sensitive NIR narrowband detection.
National Natural Science Foundation of China ; Science and Technology Planning Project of Shenzhen Municipality[JCYJ20200109144615514] ; Scientific research startup funding[:01010600009]
|WOS Research Area|
Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
|WOS Accession No|
Cited Times [WOS]:0
|Document Type||Journal Article|
|Department||Department of Materials Science and Engineering|
1.Tsinghua-Berkeley Shenzhen Institute (TBSI),Tsinghua University,Shenzhen,518055,China
2.Tsinghua Shenzhen International Graduate School (SIGS),Tsinghua University,Shenzhen,518055,China
3.Department of Mechanical Engineering,University of Hong Kong,999077,Hong Kong
4.Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou,310024,China
5.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
6.Department of Engineering Science and Mechanics,Pennsylvania State University,University Park,16802,United States
7.State Key Lab of New Ceramics and Fine Processing,School of Materials Science and Engineering,Tsinghua University,Beijing,100084,China
8.Department of Biomedical Engineering,Department of Materials Science and Engineering,Materials Research Institute,Pennsylvania State University,University Park,16802,United States
Xu，Zhuhua,Sun，Chuying,Min，Siyi,et al. Si/Organic Integrated Narrowband Near-Infrared Photodetector[J]. Small,2023.
Xu，Zhuhua.,Sun，Chuying.,Min，Siyi.,Ye，Zilong.,Zhao，Cong.,...&Wei，Guodan.(2023).Si/Organic Integrated Narrowband Near-Infrared Photodetector.Small.
Xu，Zhuhua,et al."Si/Organic Integrated Narrowband Near-Infrared Photodetector".Small (2023).
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