| Title | 碳化硅材料性能优异,应用迎来发展良机 |
| Alternative Title | Silicon carbide material has excellent performance and ushers in a good opportunity for development in the application field
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| Author | |
| Publication Years | 2023
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| DOI | |
| Source Title | |
| ISSN | 1681-5289
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| Volume | 32Issue:5Pages:16-21 |
| Abstract | 碳化硅作为第三代半导体材料的代表,有禁带宽度大、击穿电场高、热导率高、电子饱和速率高、抗辐射能力强等特点,由其制成的半导体器件在高温、高压、高频大功率的环境下具备良好的性能表现,被广泛应用于汽车、工业与能源、5G建设等领域.本文介绍了碳化硅产业链及其应用领域和发展前景. |
| Keywords | |
| URL | [Source Record] |
| Language | Chinese
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| SUSTech Authorship | Others
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| Data Source | WanFang
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| WanFangID | zgjcdl202305003
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| Citation statistics |
Cited Times [WOS]:0
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| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/571458 |
| Department | SUSTech Institute of Microelectronics |
| Affiliation | 南方科技大学深港微电子学院 |
| Recommended Citation GB/T 7714 |
刘宇浩. 碳化硅材料性能优异,应用迎来发展良机[J]. 中国集成电路,2023,32(5):16-21.
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| APA |
刘宇浩.(2023).碳化硅材料性能优异,应用迎来发展良机.中国集成电路,32(5),16-21.
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| MLA |
刘宇浩."碳化硅材料性能优异,应用迎来发展良机".中国集成电路 32.5(2023):16-21.
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