Progress on the antiferromagnetic topological insulator MnBi₂Te₄

Li, Shuai1,2,3,4,5,6; Liu, Tianyu2,3,4,5,6; Liu, Chang7,8; Wang, Yayu9,10; Lu, Hai-Zhou2,3,4,5,6; Xie, X. C.11,12,13

2023

10.1093/nsr/nwac296

NATIONAL SCIENCE REVIEW   Impact Factor & Quartile

2095-5138

2053-714X

Topological materials, which feature robust surface and/or edge states, have now been a research focus in condensed matter physics. They represent a new class of materials exhibiting nontrivial topological phases, and provide a platform for exploring exotic transport phenomena, such as the quantum anomalous Hall effect and the quantum spin Hall effect. Recently, magnetic topological materials have attracted considerable interests due to the possibility to study the interplay between topological and magnetic orders. In particular, the quantum anomalous Hall and axion insulator phases can be realized in topological insulators with magnetic order. MnBi2Te4, as the first intrinsic antiferromagnetic topological insulator discovered, allows the examination of existing theoretical predictions; it has been extensively studied, and many new discoveries have been made. Here we review the progress made on MnBi2Te4 from both experimental and theoretical aspects. The bulk crystal and magnetic structures are surveyed first, followed by a review of theoretical calculations and experimental probes on the band structure and surface states, and a discussion of various exotic phases that can be realized in MnBi2Te4. The properties of MnBi2Te4 thin films and the corresponding transport studies are then reviewed, with an emphasis on the edge state transport. Possible future research directions in this field are also discussed.

MnBi2Te4 magnetic topological insulator antiferromagnetic quantum anomalous Hall effect axion insulator

SCI

English

Corresponding

Science & Technology - Other Topics

Multidisciplinary Sciences

WOS:001073463200001

OXFORD UNIV PRESS

Web of Science

1.Harbin Inst Technol, Dept Phys, Harbin 150001, Peoples R China
2.Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol SUSTech, Dept Phys, Shenzhen 518055, Peoples R China
4.Quantum Sci Ctr Guangdong Hong Kong Macao Greater, Hong Kong 518045, Peoples R China
5.Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Peoples R China
6.Int Quantum Acad, Shenzhen 518048, Peoples R China
7.Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
8.Renmin Univ China, Dept Phys, Beijing Key Lab Optoelect Funct Mat & Micronano De, Beijing 100872, Peoples R China
9.Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
10.Frontier Sci Ctr Quantum Informat, Beijing 100084, Peoples R China
11.Peking Univ, Int Ctr Quantum Mat, Sch Phys, Beijing 100871, Peoples R China
12.Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China
13.Hefei Natl Lab, Hefei 230088, Peoples R China

Li, Shuai,Liu, Tianyu,Liu, Chang,et al. Progress on the antiferromagnetic topological insulator MnBi₂Te₄[J]. NATIONAL SCIENCE REVIEW,2023.

Li, Shuai,Liu, Tianyu,Liu, Chang,Wang, Yayu,Lu, Hai-Zhou,&Xie, X. C..(2023).Progress on the antiferromagnetic topological insulator MnBi₂Te₄.NATIONAL SCIENCE REVIEW.

Li, Shuai,et al."Progress on the antiferromagnetic topological insulator MnBi₂Te₄".NATIONAL SCIENCE REVIEW (2023).