Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment

Li, Depeng1,2,3,4; Ma, Jingrui1,2,3,4; Liu, Wenbo1,2,3,4; Xiang, Guohong1,2,3,4; Qu, Xiangwei1,2,3,4; Jia, Siqi5; Gu, Mi1,2,3,4; Wei, Jiahao1,2,3,4; Liu, Pai1,2,3,4; Wang, Kai1,2,3,4; Sun, Xiaowei1,2,3,4

2023-09-01

10.1088/1674-4926/44/9/092603

JOURNAL OF SEMICONDUCTORS   Impact Factor & Quartile

1674-4926

The performance of inverted quantum-dot light-emitting diodes (QLEDs) based on solution-processed hole transport layers (HTLs) has been limited by the solvent-induced damage to the quantum dot (QD) layer during the spin-coating of the HTL. The lack of compatibility between the HTL's solvent and the QD layer results in an uneven surface, which negatively impacts the overall device performance. In this work, we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL's solvent. The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V, a high maximum luminance of 105 500 cd/m2, and a remarkable maximum external quantum efficiency of 13.34%. This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs.

quantum dots quantum-dot light-emitting diodes inverted structure ligand treatment

ESCI

English

First ; Corresponding

National Key Research and Development Program of China["2021YFB3602703","2022YFB3606504","2022YFB3602903"] ; National Natural Science Foundation of China[62122034] ; Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting[2017KSYS007] ; Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting[ZDSYS201707281632549] ; Shenzhen Science and Technology Program[JCYJ20220818100411025] ; Shenzhen Development and Reform Commission Project[XMHT20220114005]

Physics

Physics, Condensed Matter

WOS:001074193100001

IOP Publishing Ltd

Web of Science

1.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Tech nol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol, Guangdong Univ, Minist Educ, Key Lab Adv Quantum Dot Displays & Lighting,Key La, Shenzhen 518055, Peoples R China
4.Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quan tum Dot Displays & Light, Shenzhen 518055, Peoples R China
5.Henan Acad Sci, Inst Adv Displays & Imaging, Zhengzhou 450046, Peoples R China

Li, Depeng,Ma, Jingrui,Liu, Wenbo,et al. Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment[J]. JOURNAL OF SEMICONDUCTORS,2023,44(9).

Li, Depeng.,Ma, Jingrui.,Liu, Wenbo.,Xiang, Guohong.,Qu, Xiangwei.,...&Sun, Xiaowei.(2023).Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment.JOURNAL OF SEMICONDUCTORS,44(9).

Li, Depeng,et al."Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment".JOURNAL OF SEMICONDUCTORS 44.9(2023).