The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices

Liu, Junbo; Zou, Wensong; Chen, Jiawei; Hua, Mengyuan; Lu, Di; Ma, Jun

2023-09-11

10.1063/5.0155073

APPLIED PHYSICS LETTERS   Impact Factor & Quartile

0003-6951

1077-3118

In this work, we focused on investigating the transport-limited trapping effects in GaN-on-Si buffer layers as well as impact of the thickness of buffer layers (T-Buf) upon such effects. Vertical transport dynamics of charges within the buffer layers and their key energy levels are quantitatively and statistically investigated and analyzed. The results show that an increased T-Buf diminishes both impurity conduction of the defect band formed by carbon doping as well as the injection of electrons from the substrate, greatly diminishing the current collapse and improving the stability of the device. Such enhancement is mainly attributed to the reduced vertical electric field within the thickened epitaxy, which provides an additional pathway to address the current collapse and yields more efficient power GaN-on-Si devices.

SCI

English

NI Journal Papers

First ; Corresponding

National Natural Science Foundation[62104092] ; Natural Science Foundation of Guangdong Province[2021A1515011952]

Physics

Physics, Applied

WOS:001067700900020

AIP Publishing

PHYSICS

Web of Science

Southern Univ Sci & Technol SUSTech, Dept Elect & Elect Engn, Shenzhen, Peoples R China

Liu, Junbo,Zou, Wensong,Chen, Jiawei,et al. The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices[J]. APPLIED PHYSICS LETTERS,2023,123(11).

Liu, Junbo,Zou, Wensong,Chen, Jiawei,Hua, Mengyuan,Lu, Di,&Ma, Jun.(2023).The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices.APPLIED PHYSICS LETTERS,123(11).

Liu, Junbo,et al."The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices".APPLIED PHYSICS LETTERS 123.11(2023).