Highly Nonlinear Memory Selectors with Ultrathin MoS₂/WSe₂/MoS₂ Heterojunction

Chen, Hongye1,2; Wan, Tianqing2; Zhou, Yue2; Yan, Jianmin2; Chen, Changsheng2; Xu, Zhihang2; Zhang, Songge2; Zhu, Ye2; Yu, Hongyu1; Chai, Yang2

2023-09-01

10.1002/adfm.202304242

ADVANCED FUNCTIONAL MATERIALS   Impact Factor & Quartile

1616-301X

1616-3028

Resistive random access memory (RRAM) crossbar arrays require the highly nonlinear selector with high current density to address a specific memory cell and suppress leakage current through the unselected cell. 3D monolithic integration of RRAM array requires selector devices with a small footprint and low-temperature processing for ultrahigh-density data storage. Here, an ultrathin two-terminal n-p-n selector with 2D transition metal dichalcogenides (TMDs) is designed by a low-temperature transfer method. The van der Waals contact between transferred Au electrodes and TMDs reduces the Fermi level pinning and retains the intrinsic transport behavior of TMDs. The selector with a single type of TMD exhibits a trade-off between current density and nonlinearity depending on the barrier height. By tuning the Schottky barrier height and controlling the thickness of p-type WSe2 in MoS2/WSe2/MoS2 n-p-n selector for a punch-through transport, the selector shows high nonlinearity (approximate to 230) and high current density (2 x 10(3) A cm(-2)) simultaneously. The n-p-n selectors are further integrated with a bipolar hexagonal boron nitride memory and calculate the maximum crossbar size of the 2D material-based one-selector one-resistor according to a 10% read margin, which offers the possible realization of future 3D monolithic integration.

2D materials memory punch-through mechanism Schottky barrier selectors van der Waals heterojunction

SCI

English

NI Journal Papers

Corresponding

Research Grant Council of Hong Kong[CRS_PolyU502/22] ; Shenzhen Science and Technology Innovation Commission[SGDX2020110309540000] ; Innovation Technology Fund[ITS/047/20] ; Hong Kong Polytechnic University[1-ZE1T] ; Hong Kong Polytechnic University Shenzhen Research Institute[I2022A013]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:001067836900001

WILEY-V C H VERLAG GMBH

MATERIALS SCIENCE

Web of Science

1.Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong 999077, Peoples R China
2.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China

Chen, Hongye,Wan, Tianqing,Zhou, Yue,et al. Highly Nonlinear Memory Selectors with Ultrathin MoS₂/WSe₂/MoS₂ Heterojunction[J]. ADVANCED FUNCTIONAL MATERIALS,2023.

Chen, Hongye.,Wan, Tianqing.,Zhou, Yue.,Yan, Jianmin.,Chen, Changsheng.,...&Chai, Yang.(2023).Highly Nonlinear Memory Selectors with Ultrathin MoS₂/WSe₂/MoS₂ Heterojunction.ADVANCED FUNCTIONAL MATERIALS.

Chen, Hongye,et al."Highly Nonlinear Memory Selectors with Ultrathin MoS₂/WSe₂/MoS₂ Heterojunction".ADVANCED FUNCTIONAL MATERIALS (2023).