Ferroelectricity of pristine Hf_0.5Zr_0.5O₂ films fabricated by atomic layer deposition

Chen, Luqiu1,2; Zhang, Xiaoxu1,2; Feng, Guangdi1,2; Liu, Yifei1; Hao, Shenglan1; Zhu, Qiuxiang1,3; Feng, Xiaoyu1; Qu, Ke1; Yang, Zhenzhong1; Qi, Yuanshen4; Ivry, Yachin5; Dkhil, Brahim6; Tian, Bobo1,2; Chu, Junhao1,7; Duan, Chungan1,8,9

2023-10-01

10.1088/1674-1056/accff3

CHINESE PHYSICS B   Impact Factor & Quartile

1674-1056

2058-3834

Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics. This work demonstrates that a remanent polarization (P-r) value of < 5 mu C/cm(2) can be obtained in as-deposited Hf0.5Zr0.5O2 (HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 degree celsius. The ferroelectric orthorhombic phase (o-phase) in the as-deposited HZO films is detected by scanning transmission electron microscopy (STEM). This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.

Hf0.5Zr0.5O2 (HZO) ferroelectric orthorhombic without annealing

SCI

English

Corresponding

Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA1200700), the National Natural Science Foundation of China (Grant Nos. T2222025 and 62174053), the Open Research Projects of Zhejiang Laboratory (Grant No. 20[2021YFA1200700] ; National Key Research and Development Program of China["T2222025","62174053"] ; National Natural Science Foundation of China[2021MD0AB03] ; Open Research Projects of Zhejiang Laboratory["21JC1402000","21520714100"] ; Shanghai Science and Technology Innovation Action Plan[2021B1212040001] ; Fundamental Research Funds for the Central Universities[149-2020]

Physics

Physics, Multidisciplinary

WOS:001077646300001

IOP Publishing Ltd

Web of Science

1.East China Normal Univ, Shanghai Ctr Brain Inspired Intelligent Mat & Devi, Dept Elect, Key Lab Polar Mat & Devices MOE,Minist Educ, Shanghai 200241, Peoples R China
2.Zhejiang Lab, Hangzhou 310000, Peoples R China
3.Southern Univ Sci & Technol, Guangdong Provis Key Lab Funct Oxide Mat & Devices, Shenzhen 518055, Peoples R China
4.Guangdong Technion Israel Inst Technol, Dept Mat Sci & Engn, Shantou 515063, Peoples R China
5.Technion Israel Inst Technol, Solid State Inst, Dept Mat Sci & Engn, IL-3200003 Haifa, Israel
6.Univ Paris Saclay, Cent Supelec, CNRS UMR8580, Lab Struct Proprietes & Modelisat Solides, F-91190 Gif Sur Yvette, France
7.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
8.Fudan Univ, Inst Optoelect, Shanghai 200433, Peoples R China
9.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China

Chen, Luqiu,Zhang, Xiaoxu,Feng, Guangdi,et al. Ferroelectricity of pristine Hf_0.5Zr_0.5O₂ films fabricated by atomic layer deposition[J]. CHINESE PHYSICS B,2023,32(10).

Chen, Luqiu.,Zhang, Xiaoxu.,Feng, Guangdi.,Liu, Yifei.,Hao, Shenglan.,...&Duan, Chungan.(2023).Ferroelectricity of pristine Hf_0.5Zr_0.5O₂ films fabricated by atomic layer deposition.CHINESE PHYSICS B,32(10).

Chen, Luqiu,et al."Ferroelectricity of pristine Hf_0.5Zr_0.5O₂ films fabricated by atomic layer deposition".CHINESE PHYSICS B 32.10(2023).