| Title | Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs |
| Author | |
| Publication Years | 2023
|
| DOI | |
| Source Title | |
| ISSN | 1557-9646
|
| Volume | PPIssue:99Pages:1-4 |
| Keywords | |
| URL | [Source Record] |
| SUSTech Authorship | First
|
| ESI Research Field | ENGINEERING
|
| Data Source | IEEE
|
| PDF url | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10298254 |
| Citation statistics | |
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/582742 |
| Department | Department of Electrical and Electronic Engineering |
| Affiliation | Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China |
| First Author Affilication | Department of Electrical and Electronic Engineering |
| First Author's First Affilication | Department of Electrical and Electronic Engineering |
| Recommended Citation GB/T 7714 |
Jiawei Chen,Junbo Liu,Wensong Zou,et al. Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs[J]. IEEE Transactions on Electron Devices,2023,PP(99):1-4.
|
| APA |
Jiawei Chen,Junbo Liu,Wensong Zou,&Jun Ma.(2023).Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs.IEEE Transactions on Electron Devices,PP(99),1-4.
|
| MLA |
Jiawei Chen,et al."Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs".IEEE Transactions on Electron Devices PP.99(2023):1-4.
|
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment