| Title | Mechanically Gated Transistor |
| Author | |
| Corresponding Author | Huang, Boyuan; Li, Jiangyu |
| Publication Years | 2023-10-01
|
| DOI | |
| Source Title | |
| ISSN | 0935-9648
|
| EISSN | 1521-4095
|
| Abstract | Silicon-based field effect transistors have underpinned the information revolution in the last 60 years, and there is a strong desire for new materials, devices, and architectures that can help sustain the computing power in the age of big data and artificial intelligence. Inspired by the Piezo channels, a mechanically gated transistor abandoning electric gating altogether, achieving an ON/OFF ratio over three orders of magnitude under a mechanical force of hundreds of nN is developed. The two-terminal device utilizes flexoelectric polarization induced by strain gradient, which modulates the carrier concentration in a Van der Waals structure significantly, and it mimics Piezo channels for artificial tactile perception. This simple device concept can be easily adapted to a wide range of semiconducting materials, helping promote the fusion between mechanics and electronics in a similar way as mechanobiology. |
| Keywords | |
| URL | [Source Record] |
| Indexed By | |
| Language | English
|
| Important Publications | NI Journal Papers
|
| SUSTech Authorship | First
; Corresponding
|
| Funding Project | This work was supported by the National Natural Science Foundation of China (No. 12192213, No. 12102164, No. 52172115), National Key Research and Development Program of China (2022YFF0706100), Guangdong Provincial Key Laboratory Program (2021B1212040001),["12192213","12102164","52172115"]
; National Natural Science Foundation of China[2022YFF0706100]
; National Key Research and Development Program of China[2021B1212040001]
; Guangdong Provincial Key Laboratory Program["JCYJ20220818100410022","RCBS20210609103201007"]
; Shenzhen Science and Technology Program[2020A1515110989]
|
| WOS Research Area | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
|
| WOS Subject | Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|
| WOS Accession No | WOS:001093906100001
|
| Publisher | |
| ESI Research Field | MATERIALS SCIENCE
|
| Data Source | Web of Science
|
| Citation statistics | |
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/582750 |
| Department | Department of Materials Science and Engineering |
| Affiliation | 1.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China 2.Southern Univ Sci & Technol, Guangdong Prov Key Lab Funct Oxide Mat & Devices, Shenzhen 518055, Guangdong, Peoples R China 3.Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Hunan, Peoples R China |
| First Author Affilication | Department of Materials Science and Engineering; Southern University of Science and Technology |
| Corresponding Author Affilication | Department of Materials Science and Engineering; Southern University of Science and Technology |
| First Author's First Affilication | Department of Materials Science and Engineering |
| Recommended Citation GB/T 7714 |
Huang, Boyuan,Yu, Ye,Zhang, Fengyuan,et al. Mechanically Gated Transistor[J]. ADVANCED MATERIALS,2023.
|
| APA |
Huang, Boyuan.,Yu, Ye.,Zhang, Fengyuan.,Liang, Yuhang.,Su, Shengyao.,...&Li, Jiangyu.(2023).Mechanically Gated Transistor.ADVANCED MATERIALS.
|
| MLA |
Huang, Boyuan,et al."Mechanically Gated Transistor".ADVANCED MATERIALS (2023).
|
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