Monolithic integrated all-GaN-based μLED display by selective area regrowth

Liu, Yaying1,2; Liu, Zhaojun1; Lau, Kei may2

2023-09-11

10.1364/OE.502275

OPTICS EXPRESS   Impact Factor & Quartile

1094-4087

This work demonstrates an all-GaN-based mu LED display with monolithic integrated HEMT and mu LED pixels using the selective area regrowth method. The monochrome mu LED-HEMT display has a resolution of 20 x 20 and a pixel pitch of 80 mu m. With the optimized regrowth pattern, the mu LED-HEMT achieves a maximum light output power of 36.2 W/cm2 and a peak EQE of 3.36%, mainly due to the improved crystal quality of regrown mu LED. TMAH treatment and Al2O3 surface passivation are also performed to minimize the impact of nonradiative recombination caused by the dry etching damage. With a custom-designed driving circuit board, images of "HKUST" are successfully shown on the mu LED-HEMT display.(c) 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

SCI

English

First ; Corresponding

Shenzhen Science and Technology Program[JCYJ20220818100603007] ; Fundamental and Applied Fundamental Research Fund of Guangdong Province[2021B1515130001]

Optics

Optics

WOS:001080803000002

Optica Publishing Group

PHYSICS

Web of Science

1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Clear Water Bay, Hong Kong, Peoples R China

Liu, Yaying,Liu, Zhaojun,Lau, Kei may. Monolithic integrated all-GaN-based μLED display by selective area regrowth[J]. OPTICS EXPRESS,2023,31(19).

Liu, Yaying,Liu, Zhaojun,&Lau, Kei may.(2023).Monolithic integrated all-GaN-based μLED display by selective area regrowth.OPTICS EXPRESS,31(19).

Liu, Yaying,et al."Monolithic integrated all-GaN-based μLED display by selective area regrowth".OPTICS EXPRESS 31.19(2023).