Significant Enhancement of Circular Polarization in Light Emission through Controlling Helical Pitches of Semiconductor Nanohelices

Ni, Ziyue1; Qin, Ping2; Liu, Hongshuai1; Chen, Jiafei3,4; Cai, Siyuan5; Tang, Wenying6; Xiao, Hui7; Wang, Chen6; Qu, Geping5,8; Lin, Chao9; Fan, Zhiyong6; Xu, Zong-Xiang5; Li, Guixin4; Huang, Zhifeng10

2023-10-05

10.1021/acsnano.3c07663

ACS NANO   Impact Factor & Quartile

1936-0851

1936-086X

Circularly polarized light emission (CPLE) can be potentially applied to three-dimensional displays, information storage, and biometry. However, these applications are practically limited by a low purity of circular polarization, i.e., the small optical dissymmetry factor g(CPLE). Herein, glancing angle deposition (GLAD) is performed to produce inorganic nanohelices (NHs) to generate CPLE with large g(CPLE) values. CdSe NHs emit red CPLE with g(CPLE) = 0.15 at a helical pitch (P) approximate to 570 nm, having a 40-fold amplification of g(CPLE) compared to that at P approximate to 160 nm. Ceria NHs emit ultraviolet-blue CPLE with g(CPLE) approximate to 0.06 at P approximate to 830 nm, with a 10(3)-fold amplification compared to that at P approximate to 110 nm. Both the photoluminescence and scattering among the close-packed NHs complicatedly account for the large g(CPLE) values, as revealed by the numerical simulations. The GLAD-based NH-fabrication platform is devised to generate CPLE with engineerable color and large g(CPLE) = 10(-2)-10(-1), shedding light on the commercialization of CPLE devices.

semiconductor nanohelices circularly polarized lightemission circularly polarized luminescence circularlypolarized scattering glancing angle deposition

SCI

English

NI Journal Papers

Others

null[NSFC/22075239] ; null[GRF/12302320] ; null[GRF/12301321]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:001079391600001

AMER CHEMICAL SOC

Web of Science

1.Hong Kong Baptist Univ, Dept Phys, Kowloon, Hong Kong 999077, Peoples R China
2.Hong Kong Baptist Univ, Dept Biol, Kowloon, Hong Kong 999077, Peoples R China
3.Harbin Inst Technol, Sch Sci, Shenzhen 518055, Peoples R China
4.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
5.Southern Univ Sci & Technol, Dept Chem, Shenzhen 518055, Guangdong, Peoples R China
6.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong 999077, Peoples R China
7.Southern Univ Sci & Technol, Dept Chem, Guangdong Hong Kong Macao Joint Lab Photon Thermal, Shenzhen Key Lab Adv Quantum Dot Displays & Light, Shenzhen 518055, Guangdong, Peoples R China
8.Harbin Inst Technol, Sch Chem & Chem Engn, Harbin 150001, Peoples R China
9.Chinese Univ Hong Kong, Dept Phys, Hong Kong 999077, Peoples R China
10.Chinese Univ Hong Kong, Dept Chem, Hong Kong 999077, Peoples R China

Ni, Ziyue,Qin, Ping,Liu, Hongshuai,et al. Significant Enhancement of Circular Polarization in Light Emission through Controlling Helical Pitches of Semiconductor Nanohelices[J]. ACS NANO,2023,17(20).

Ni, Ziyue.,Qin, Ping.,Liu, Hongshuai.,Chen, Jiafei.,Cai, Siyuan.,...&Huang, Zhifeng.(2023).Significant Enhancement of Circular Polarization in Light Emission through Controlling Helical Pitches of Semiconductor Nanohelices.ACS NANO,17(20).

Ni, Ziyue,et al."Significant Enhancement of Circular Polarization in Light Emission through Controlling Helical Pitches of Semiconductor Nanohelices".ACS NANO 17.20(2023).