| Title | Bubble domain evolution in well-ordered BiFeO3 nanocapacitors |
| Author | |
| Corresponding Author | Zhang, Fengyuan |
| Publication Years | 2023-08-01
|
| DOI | |
| Source Title | |
| ISSN | 2010-135X
|
| EISSN | 2010-1368
|
| Abstract | Ferroelectric nanocapacitors have attracted intensive research interest due to their novel functionalities and potential application in nanodevices. However, due to the lack of knowledge of domain evolution in isolated nanocapacitors, precise manipulation of topological domain switching in the nanocapacitor is still a challenge. Here, we report unique bubble and cylindrical domains in the well-ordered BiFeO3 nanocapacitor array. The transformation of bubble, cylindrical and mono domains in isolated ferroelectric nanocapacitor has been demonstrated via scanning probe microscopy (SPM). The bubble domain can be erased to mono domain or written to cylindrical domain and mono domain by positive and negative voltage, respectively. Additionally, the domain evolution rules, which are mainly affected by the depolarization field, have been observed in the nanocapacitors with different domain structures. This work will be helpful in understanding the domain evolution in ferroelectric nanocapacitors and providing guidance on the manipulation of nanoscale topological domains. |
| Keywords | |
| URL | [Source Record] |
| Indexed By | |
| Language | English
|
| SUSTech Authorship | First
; Corresponding
|
| Funding Project | Guangdong Basic and Applied Basic Research Foundation[2021A1515110155]
; National Key Research and Development Program of China[2022YFF0706100]
; National Natural Science Foundation of China["92066203","12192213","U22A20117","52002134"]
; Guangdong Provincial Key Laboratory Program from Guangdong Science and Technology Department[2021B1212040001]
; Science and Technology Projects in Guangzhou[202201000008]
|
| WOS Research Area | Physics
|
| WOS Subject | Physics, Applied
|
| WOS Accession No | WOS:001047991800001
|
| Publisher | |
| Data Source | Web of Science
|
| Citation statistics | |
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/583017 |
| Department | Department of Materials Science and Engineering |
| Affiliation | 1.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, Guangdong Prov Key Lab Funct Oxide Mat & Devices, Shenzhen 518055, Peoples R China 3.South China Normal Univ, Inst Adv Mat, South China Acad Adv Optoelect, Guangzhou 510006, Peoples R China 4.South China Normal Univ, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Peoples R China 5.Tsinghua Shenzhen Int Grad Sch, Inst Data & Informat, Shenzhen 518055, Peoples R China |
| First Author Affilication | Department of Materials Science and Engineering; Southern University of Science and Technology |
| Corresponding Author Affilication | Department of Materials Science and Engineering; Southern University of Science and Technology |
| First Author's First Affilication | Department of Materials Science and Engineering |
| Recommended Citation GB/T 7714 |
Zhang, Fengyuan,Tian, Guo,Zhao, Lina,et al. Bubble domain evolution in well-ordered BiFeO3 nanocapacitors[J]. JOURNAL OF ADVANCED DIELECTRICS,2023.
|
| APA |
Zhang, Fengyuan,Tian, Guo,Zhao, Lina,Gao, Xingsen,&Li, Jiangyu.(2023).Bubble domain evolution in well-ordered BiFeO3 nanocapacitors.JOURNAL OF ADVANCED DIELECTRICS.
|
| MLA |
Zhang, Fengyuan,et al."Bubble domain evolution in well-ordered BiFeO3 nanocapacitors".JOURNAL OF ADVANCED DIELECTRICS (2023).
|
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